[A-1-1] InAlN/GaN HEMTs: Recent Progress and Challenges for the Future

J. Kuzmík^1,2 (1.Slovak Academy of Sciences , Slovakia, 2.TU Vienna , Austria)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate

S. Nakazawa¹, N. Tsurumi¹, M. Nishijima¹, Y. Anda¹, M. Ishida¹, T. Ueda¹, T. Tanaka¹ (1.Panasonic Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond

K. Hirama¹, M. Kasu¹, Y. Taniyasu¹ (1.NTT Corp. NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai¹, K. Yamanaka², Y. Suzuki¹, T. Nanjo¹, M. Suita¹, K. Shiozawa¹, Y. Abe¹, E. Yagyu¹, A. Shima¹ (1.Advanced Tech. R&D Center, Mitsubishi Electric Corp., 2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Temperature Dependence and Current Collapse of AlGaN/GaN Super Heterojunction Field Effect Transistor

S. Yagi¹, S. Hirata¹, Y. Sumida¹, A. Nakajima², H. Kawai¹, E. M. Sankara Narayanan² (1.POWDEC. K. K. , Japan, 2.Univ. Sheffeld , UK)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-1-6] Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor

H. A. Shih¹, M. Kudo¹, M. Akabori¹, T. Suzuki¹ (1.JAIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Extending the Bandwidth and Functionality of High Performance InP HBT Technologies

M. Urteaga¹, R. Pierson¹, J. Bergman¹, D. H. Kim¹, P. Rowell¹, B. Brar¹, M. Rodwell² (1.Teledyne Scientific Company, 2.Univ. of California, Santa Barbara , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Low-turn-on voltage heterojunction bipolar transistors with a C-doped In_xGa_1-xAs_1-ySb_y base grown by metalorganic chemical vapor deposition

T. Hoshi¹, H. Sugiyama¹, H. Yokoyama¹, K. Kurishima¹, M. Ida¹ (1.NTT Photonics Labs, NTT Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Effects of Plasma-PH₃ passivation on Mobility Degradation Mechanisms and Current Conduction Mechanisms of In_0.53Ga_0.47As N-MOSFET

A. B. S. Sumarlina^1,2, H. J. Oh¹, A. Du², S. J. Lee¹ (1.National Univ. of Singapore, 2.GLOBALFOUNDRIES Singapore Pte.Ltd. , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] In_0.53Ga_0.47As Channel N-MOSFETs with Shallow Metallic S/D Extension

Z. Zhu¹, X. Gong¹, Ivana¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF Download