[H-2-1] III-V Nanowires grown by MOCVD for Optoelectronics Applications

H. H. Tan¹、Q. Gao¹、H. J. Joyce¹、J. H. Kang¹、S. Paiman¹、J. Wong-Leung¹、J. Zou¹、M. Paladugu¹、Y. Guo¹、H. Wang¹、X. Zhang¹、C. Jagadish¹ (1.Australian National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-2] Growth and Electronic Structure of Epitaxial Graphene on Silicon Carbide

A. Bostwick¹、E. Rotenberg¹、J. McChesney^1,2、T. Ohta^1,2、T. Seyller³、K. Horn² (1.ALS. Lawrence Berkeley Lab.(USA)、2.Fritz Haber Inst.(Germany)、3.Univ. Erlangen(Germany))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-3] Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy using Cracked-Ethanol

F. Maeda¹、H. Hibino¹ (1.NTT Basic Res. Labs.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-4] Effect of Carrier Gas (Ar and He) on the Crystallographic Quality of Multi-layer Graphene Grown on Si by Photoemission-assisted Plasma CVD

H. Sumi¹、S. Ogawa^1,2、A. Saikubo^2,3、E. Ikenaga^2,3、M. Nihei^2,4、Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan)、3.JASRI/SPring-8(Japan)、4.Fujitsu Ltd.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-5] Electronic Structure of Carbon Nanowalls using Resonant Soft-X-Ray Emission Spectroscopy

W. Takeuchi¹、M. Hiramatsu²、Y. Tokuda³、H. Kano⁴、T. Kinoshita⁵、Y. Kato⁵、T. Muro⁵、S. Kimura⁵、M. Hori¹ (1.Nagoya Univ.(Japan)、2.Aichi Inst. Of Tech.(Japan)、3.Meijo Univ.(Japan)、4.NU Eco-Engi. Co. ,Ltd.(Japan)、5.JASRI/Spring-8(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-6L] Epitaxy of Graphene on Si substrates toward Three-Dimensional Graphene Devices

H. Fukidome¹、Y. Miyamoto¹、H. Handa^1,2、R. Takahashi¹、K. Imaizumi¹、M. Suemitsu^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-2-7L] Micro/nanospheres from polysilsequioxane containing UVB-absorbing group

P. Kidsaneepoiboon¹、S. P. Wanichwecharungruang¹ (1.Chulalongkorn Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-1] High throughput combinatorial materials Exploration for advanced magneto-electronics

T. Fukumura^1,2 (1.Tohoku Univ.(Japan)、2.PRESTO-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-2] Control of Crystal-growth of VO₂ Films Fabricated by Excimer Laser Assisted Metal Organic Deposition

M. Nishikawa¹、T. Nakajima²、T. Kumagai²、T. Okutani¹、T. Tsuchiya² (1.Yokohama National Univ.(Japan)、2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-3-3] Prediction of Crystallization Temperature for HfO₂ Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

K. Nishitani^1,2、H. Yabuhara¹、A. Endou²、A. Suzuki²、H. Tsuboi²、N. Hatakeyama²、H. Takaba²、M. Kubo²、A. Miyamoto² (1.Toshiba Corp.(Japan)、2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード