[M-5-3] 1.7 KV Breakdown C-H Diamond MOSFETs with High Drain Current Density

^○Y. Kitabayashi¹, T. Yamada¹, D. Xu¹, T. Saito¹, D. Matsumura¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 6:10 PM - 6:25 PM |PDF Download

[M-5-4] First Demonstration of β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

^○K. Sasaki^1,2, M. Higashiwaki², K. Goto¹, K. Nomura³, Q. T. Thieu³, R. Togashi³, H. Murakami³, Y. Kumagai³, B. Monemar^3,4, A. Koukitu³, A. Kuramata¹, S. Yamakoshi¹ (1.Tamura Corp., 2.NICT, 3.Tokyo Univ. of Agri. & Tech., 4.Linköping Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 6:25 PM - 6:40 PM |PDF Download

[M-6-1] Improved Performance of α-IGZO Thin-Film Transistors with an Au/HfSiO/IGZO(O₂-rich) Schottky Source

^○C. H. Hung¹, S. J. Wang¹, Y. H. Chen¹, C. H. Wu², C. Lin¹, P. Y. Liu¹, Y. C. Tu¹, T. H. Lin¹ (1.National Cheng Kung Univ., 2.Chung Hua Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:00 AM - 9:15 AM |PDF Download

[M-6-2] Correlation between Crystallinity and Formation of Oxygen Vacancies in IGZO - Comparison between Crystal and Amorphous Using First-Principles Calculations -

^○T. Hiramatsu¹, M. Nakashima¹, E. Kikuchi¹, N. Ishihara¹, M. Tsubuku¹, K. Dairiki¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:15 AM - 9:30 AM |PDF Download

[M-6-3] Ideal Deep-Subthreshold Characteristics in C-Axis Aligned Crystalline Oxide Semiconductor FET

^○D. Matsubayashi¹, M. Tsubuku¹, T. Takeuchi¹, S. Matsuda¹, K. Ohshima¹, T. Tanaka¹, A. Shimomura¹, M. Sakakura¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:30 AM - 9:45 AM |PDF Download

[M-6-4] Trench Gate Process for 60-nm-Node C-Axis Aligned Crystalline In-Ga-Zn-O Field-Effect Transistors

^○Y. Asami¹, A. Shimomura¹, Y. Okazaki¹, D. Matsubayashi¹, M. Tsubuku¹, M. Kurata¹, S. Okamoto¹, S. Sasagwa¹, T. Moriwaka¹, T. Kakehata¹, Y. Yakubo¹, K. Kato¹, YamamotoY. ¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:45 AM - 10:00 AM |PDF Download

[M-7-1] (Invited) THz Devices Based on 2D Electron Systems

^○H. G. Xing, R. Yan, B. Song, J. Encomendero, D. Jena (1.Cornell Univ.(USA))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 10:45 AM - 11:15 AM |PDF Download

[M-7-2] Electrical Characteristics of Au/Ni Schottky Diodes on Cleaved m-Plane Surfaces of Free-Standing n-GaN Substrates

^○M. Naganawa¹, T. Aoki¹, T. Mishima², K. Shiojima¹ (1.Univ. of Fukui, 2.Hosie Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:15 AM - 11:30 AM |PDF Download

[M-7-3] Net Acceptor Type Trap Density in Semi-insulating GaN Layers

^○T. Tanaka¹, N. Ito¹, M. Akutsu¹, K. Chikamatsu¹, S. Takado¹, K. Nakahara¹ (1.ROHM Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:30 AM - 11:45 AM |PDF Download

[M-7-4] GaAs/In_0.2Ga_0.8As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping

^○Q. Li¹, Y. Han¹, K. M. Lau¹ (1.Hong Kong Univ. of Sci. and Tech.(China))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:45 AM - 12:00 PM |PDF Download