[E-6-03] Circular Polarized Lasing Characteristics in Metal/GaN Double-Spiral Cavity Laser at Room Temperature

^○C. L. Yu¹, S. W. Liao¹, Y. H. Hsiao¹, H. C. Kuo¹, M. H. Shih^1,2 (1.NCTU(Taiwan), 2.Academia Sinica(Taiwan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:45 AM - 12:00 PM |PDF Download

[E-6-04] Investigation of the Linewidth of a Tunable Laser Integrated with DFB Lasers and a Semiconductor Optical Amplifier

^○K. Enoki¹, Y. Horiguchi¹, K. Kojima², T. Koike-Akino², K. Akiyama¹ (1.Mitsubishi Electric Corp.(Japan), 2.Mitsubishi Electric Research Labs.(USA))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:00 PM - 12:15 PM |PDF Download

[E-6-05(Late News)] Growth and Characterization of ¹⁶⁷Er Doped-Y₂SiO₅ Single Crystal

^○H. Omi^1,2, T. Tawara^1,2, K. Shimizu¹, S. Saito¹ (1.NTT BRL(Japan), 2.NTT Nanophotonics Center(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:15 PM - 12:30 PM |PDF Download

[F-1-01(Invited)] SmE Liquid Crystals for High Performance Solution-processed Polycrystalline Organic Field Effect Transistors

^○J. Hanna¹, H. Iino¹, M. Kunii¹ (1.Tokyo Tech(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[F-1-02] Ultra-low Contact Resistance in Two-Monolayer Organic Single-Crystal Transistors

^○A. Yamamura¹, C. Mitsui¹, T. Okamoto^1,2, J. Takeya^1,3 (1.Univ. of Tokyo(Japan), 2.JST-PRESTO(Japan), 3.PI-CRYSTAL Inc.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:15 PM |PDF Download

[F-1-03] 300-nm High Gain Multi-Stage Organic CMOS Inverters

^○R. Nawrocki¹, S. Lee¹, N. Matsuhisa¹, T. Yokota¹, T. Someya¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:15 PM - 2:30 PM |PDF Download

[F-1-04] Threshold Voltage Control of Organic Thin Film Transistors (OTFTs)by Using Floated Double Gate Structure

^○S. Lee¹, T. Yokota¹, T. Someya¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:30 PM - 2:45 PM |PDF Download

[F-1-05] Low Voltage Operation of Organic n-type Thin Film Transistor with Solution Process.

^○K. Kuribara¹, S. Aoki², K. Kakita³, Y. Tanaka³, T. Kozasa¹, S. Uemura¹, T. Nobeshima¹, T. Kawai², M. Yoshida¹ (1.AIST(Japan), 2.Tokyo Univ. of Science(Japan), 3.Ube Industries(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:45 PM - 3:00 PM |PDF Download

[F-1-06(Late News)] Steep Subthreshold Swing of Pentacene-based OFET with Nitrogen-doped LaB₆ Interfacial Layer

^○Y. Maeda¹, S. Ohmi¹ (1.Tokyo Tech(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:00 PM - 3:15 PM |PDF Download

[F-2-01(Invited)] Efficient and Stable Large-area Perovskite Solar Cells

^○L. Han¹ (1.NIMS(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:40 PM - 4:10 PM |PDF Download