Poster presentation

[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

Wed. Mar 11, 2015 1:30 PM - 3:30 PM P2 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[11p-P2-1] Dissolution of carbon and contamination of solvent metal in solution growth of SiC

〇Kento Hine¹, Taishi toshinori² (1.Shinshu Univ(eng), 2.Shinshu Univ)

1:30 PM - 3:30 PM

[11p-P2-2] Stability of 4H-polytype of 2D-nuclei during SiC solution growth

Ayano Hanafusa¹, Masayuki Higuchi¹, 〇Koji Ashida¹, Yasunori Kutsuma¹, Tadaaki Kaneko¹ (1.Kwansei Gakuin Univ.)

1:30 PM - 3:30 PM

[11p-P2-3] Solution drift and crystalline morphology in the SiC solution growth

〇(M1)Takashi Kato¹, Kazuhito kamei^1,², Kazuhiko kusunoki², Kazuaki Seki² (1.Tohoku Univ., 2.Nippon Steel & Sumitomo Metal)

1:30 PM - 3:30 PM

[11p-P2-4] Rapid Growth of SiC Films on Si Substrates Covered with Natural Oxide Using Monomethylsilane (II).

〇Shinpei Yamada¹, Yuzuru Narita¹, Kensuke Nakajima¹, Masamichi Naitoh², Maki Suemitsu³ (1.Yamagata Univ., 2.Kyushu Inst. Tech., 3.RIEC, Tohoku Univ.)

1:30 PM - 3:30 PM

[11p-P2-5] Preparation of SiC Nanoparticles by Laser Ablation

〇Ryota Tsubakiyama¹, Ami Tsuzurabara¹, Kensuke Miyajima¹ (1.Tokyo Univ of Sci.)

1:30 PM - 3:30 PM

[11p-P2-6] Observation of nano-hillock pair in 4H-SiC wafer by mirror projection electron microscopy, SEM and FIB-STEM

〇Toshiyuki Isshiki¹, Yoshihisa Orai², Takahiro Sato², Munetoshi Fukui² (1.Kyoto Inst. Tech., 2.Hitachi High-Tech)

1:30 PM - 3:30 PM

[11p-P2-7] Electron Microscopy Analysis of Extended Dislocation of 4H-SiC

〇Takahiro Sato¹, Yoshihiro Ohtsu², Yoshihisa Orai¹, Toshiyuki Isshiki³, Munetoshi Fukui¹ (1.Hitachi High-Technologies, 2.Hitachi High-Tech Manufacturing & Service, 3.Kyoto Institute of Technology)

1:30 PM - 3:30 PM

[11p-P2-8] The atomic step inducing a self-texturizing of peptide

〇Yayoi Tanaka¹, Takao Kanda², Osamu Eryu¹ (1.Nagoya Inst. of Tech., 2.POVAL KOGYO Co.,Ltd.)

1:30 PM - 3:30 PM

[11p-P2-9] Characteristics of nitrogen incorporation at SiC/SiO₂ interface on Si-face and C-face 4H-SiC

〇Daisuke Mori¹, Kei Inoue¹, Hideaki Teranishi¹, Aki Takigawa¹, Takayuki Hirose¹ (1.Fuji Electric)

1:30 PM - 3:30 PM

[11p-P2-10] Effect of Water Molecule Absorption on 4H-SiC Thermal Oxide Film

〇Tadashi Sato¹, Shin-Ichiro Kuroki¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Takamaro Kikkawa¹ (1.RNBS, Hiroshima Univ., 2.Phenitec Semicon)

1:30 PM - 3:30 PM

[11p-P2-11] Radiation Hardness Characteristics of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

〇Takuma Matsuda^1,², Takashi Yokoseki^1,², Satoshi Mitomo^1,², Koichi Murata^1,², Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd.)

1:30 PM - 3:30 PM

[11p-P2-12] Difference by the Oxide Fabrication Process of the Gamma-ray Irradiation Effect on SiC-MOSFETs

〇Satoshi Mitomo^1,², Takuma Matsuda^1,², Koichi Murata^1,², Takashi Yokoseki^1,², Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd)

1:30 PM - 3:30 PM

[11p-P2-13] Low resistance SiC/Metal ohmic contact formation by partial Amorphization and its Mechanism

〇(M2)DeSilva Milantha¹, Shin-Ichiro Kuroki¹, Seiji Ishikawa^1,², Tomonori Maeda^1,², Hiroshi Sezaki^1,², Takamaro Kikkawa¹ (1.Hiroshima Univ. RNBS, 2.Phenitec Semi.Corp.)

1:30 PM - 3:30 PM

[11p-P2-14] Formation of Ohmic Contact for p-type 4H-SiC Surface using Laser Anneal System

〇YOSUKE NAKANISHI¹, HIROAKI OKABE¹, YU NAKAMURA¹, KENSUKE TAGUCHI¹, KAZUYUKI SUGAHARA¹, NOBUYUKI TOMITA¹, SATOSHI YAMAKAWA¹ (1.Mitsubishi Electric)

1:30 PM - 3:30 PM

△ [11p-P2-15] Injection of minority carrriers in 4H-SiC/Si HBT structures by using surface-activated bonding

〇(B)SAE SHIMIZU¹, SYOTA NISHIDA¹, JIANBO LIANG¹, MASASI MORIMOTO¹, NAOTERU SHIGEKAWA¹, MANABU ARAI² (1.Osaka City Univ., 2.New Japan Radio Co., Ltd.)

Oral presentation

[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

Thu. Mar 12, 2015 9:00 AM - 11:45 AM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-B4-1] Influence of Sn addition in SiCrAl solvent in 4H-SiC solution growth

〇Naoyoshi Komatsu¹, Takeshi Mitani^1,², Tetsuo Takahashi^1,², Tomohisa Kato^1,², Toru Ujihara³, Yuji Matsumoto⁴, Kazuhisa Kurashige^1,⁵, Hajime Okumura^1,² (1.FUPET, 2.AIST, 3.Nagoya Univ., 4.Tohoku Univ., 5.Hitachi Chemical Co., Ltd.)

9:15 AM - 9:30 AM

[12a-B4-2] Correlation between threading dislocation conversion during SiC solution growth and macrosteps on the growth surface

〇Shunta Harada¹, Shiyu Xiao¹, Kenta Aoyagi¹, Kenta Murayama¹, Takenobu Sakai¹, Miho Tagawa¹, Toru Ujihara¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

[12a-B4-3] Generation and suppression of interfacial dislocations in SiC epitaxial film growth using a horizontal CVD reactor

〇Chiaki Kudou^1,², Keiko Masumoto^1,⁵, Hirokuni Asamizu^1,³, Kentaro Tamura^1,³, Johji Nishio^1,⁴, Kazutoshi Kojima^1,⁵, Toshiyuki Ohno^1,⁶ (1.FUPET, 2.Panasonic, 3.ROHM, 4.Toshiba, 5.AIST, 6.Hitachi)

9:45 AM - 10:00 AM

[12a-B4-4] Periodic distance of surface nanostructures on 4H-SiC(0001) with various off-angles

〇Kouhei Fukuma¹, Tomoya Takasaki¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyushu University)

10:00 AM - 10:15 AM

[12a-B4-5] Crystal Quality of Free-Standing 3C-SiC (111) Substrates by Low Temperature Growth

〇Hidetoshi Asamura¹, Sumito Oouchi¹, Mitsuhisa Narukawa¹, Toru Inagaki¹, Keisuke Kawamura¹ (1.Air Water R & D)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [12a-B4-6] SiC for water splitting with photocurrent of 12 mA/W

〇naoto ichikawa¹ (1.NIT)

10:45 AM - 11:00 AM

[12a-B4-7] Analysis of temperature dependence of surface recombination velocities for 4H-SiC

〇(B)Kimihiro Kohama¹, Yuto Mori¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)

11:00 AM - 11:15 AM

△ [12a-B4-8] Temperature dependence of Hall effect in p-type 4H-SiC with various doping concentrations

〇Satoshi Asada¹, Takafumi Okuda¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

11:15 AM - 11:30 AM

[12a-B4-9] ESR study on hydrogen passivation of vacancy defects and formation of hydrogen complexes in 4H-SiC

〇Souki Tanai¹, Kouki Murakami¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Ryouji Kosugi³, Takeshi Ohshima⁴, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST, 4.JAEA)

11:30 AM - 11:45 AM

△ [12a-B4-10] Analysis of gate bias dependent carrier distribution of cross-sectioned SiC-DMOSFET by ac biasing using super-higher-order SNDM

〇Norimichi Chinone¹, Cho Yasuo¹ (1.Tohoku Univ.)

Oral presentation

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 9:00 AM - 11:45 AM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-B4-1] Theoretical Investigation for Reaction Processes of Initial Oxidation on SiC Surfaces

〇Ayako Ito¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

9:15 AM - 9:30 AM

[13a-B4-2] Theoretical study for oxidation reaction processes at 4H-SiC/SiO₂ interfaces

〇Toru Akiyama¹, Ayako Ito¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

9:30 AM - 9:45 AM

[13a-B4-3] First-Principles/Classical Molecular Dynamics Simulations of 4H-SiC Oxidation

〇Takahiro Yamasaki^1,², Nobuo Tajima^1,², Tomoaki Kaneko^1,², Nobutaka Nishikawa³, Tatsuo Schimizu⁴, koichi Kato⁴, Takahisa Ohno^1,^2,⁵ (1.NIMS, 2.MARCEED, 3.Mizuho I&R Inst., 4.Toshiba R&D Center, 5.IIS, Univ. of Tokyo)

9:45 AM - 10:00 AM

[13a-B4-4] Electronic States at Ultrathin SiO₂/SiC Interface Measured by Total Photoelectron Yield Spectroscopy (2)

〇Akio Ohta¹, Watanabe Hiromasa², Nguyen Xuan Truyen², Katsunori Makihara², Seiichi Miyazaki² (1.VBL. Nagoya Univ., 2.Nagoya Univ.)

10:00 AM - 10:15 AM

[13a-B4-5] Impact of Remote H₂ Plasma on Chemical and Electronic Structures of 4H-SiC Surface

〇TRUYEN NGUYENXUAN¹, Akio Ohta², Daichi Takeuchi¹, Hai Zhang¹, Katsunori Makihara¹, Seiichi MIyazaki¹ (1.Nagoya Univ., 2.Nagoya Univ. VBL)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[13a-B4-6] SiO₂/SiC structure analysis using X-ray reflectivity

〇Junji Senzaki¹, Atsushi Shimozato¹, Sadafumi Yoshida¹ (1.AIST)

10:45 AM - 11:00 AM

△ [13a-B4-7] Detection of Interface Defects in Thermally-grown SiO₂/SiC by Cathodoluminescence

〇Yuta Fukushima¹, Atthawut Chanthaphan¹, Daisuke Nagai¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:00 AM - 11:15 AM

[13a-B4-8] Dfects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance

〇(M1)Yohei Kagoyama¹, Mitsuo Okamoto², Ryoji Kosugi², Shinsuke Harada², Takahiro Maikno³, Takeshi Oshima³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.JAEA)

11:15 AM - 11:30 AM

▲ [13a-B4-9] Electrically Detected Magnetic Resonance (EDMR) Study on Interface Defects in C-face 4H-SiC Metal-Oxide-Semi-conductor Field Effect Transistors

〇(B)GEONWOO KIM¹, Shijie Ma¹, Ryo Arai¹, Mitsuo Okamoto², Shinsuke Harada², Takahiro Makino³, Takeshi Ohshima³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.JAEA)

11:30 AM - 11:45 AM

[13a-B4-10] Interfacial Properties near Conduction Band Edge in SiO₂/SiC MOS Structures II

〇Wakana takeuchi¹, Kensaku Yamamoto², Mitsuo Sakashita¹, Takashi Kanemura², Osamu Nakatsuka¹, Shigeaki Zaima^1,³ (1.Grad. Sc. of Eng., Nagoya Univ., 2.DENSO CORPORATION, 3.ESI, Nagoya Univ.)

Oral presentation

[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

Fri. Mar 13, 2015 4:15 PM - 6:30 PM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:15 PM - 4:30 PM

△ [13p-B4-1] Quantitative Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

〇Yuki Fujino¹, Richard Heihachiro Kikuchi¹, Koji Kita^1,² (1.The Univ. of Tokyo, 2.JST-PRESTO)

4:30 PM - 4:45 PM

△ [13p-B4-2] Understanding of increase/ decrease mechanism of D_it for SiO₂/4H-SiC(0001) by low temperature O₂ annealing

〇Heihachiro Kikuchi¹, Koji Kita² (1.Univ. of Tokyo, 2.JST-PRESTO)

4:45 PM - 5:00 PM

△ [13p-B4-3] Anomalous difference between field effect mobility and effective mobility on 4H-SiC lateral MOSFET

〇Hirohisa Hirai¹, Koji Kita^1,² (1.The Univ. of Tokyo, 2.JST-PRESTO)

5:00 PM - 5:15 PM

[13p-B4-4] Systematic investigation on in-plane anisotropy of channel mobility of metal-oxide-semiconductor field-effect-transistors on Si-, a- and m-face 4H-SiC

〇Keiko Ariyoshi^1,², Ryosuke Iijima², Shinsuke Harada^1,³, Kazutoshi Kojima^1,³, Junji Senzaki^1,³, Tanaka Yasunori^1,³, Kazuto Takao², Takashi Shinohe^1,² (1.FUPET, 2.TOSHIBA, 3.AIST)

5:15 PM - 5:30 PM

[13p-B4-5] TDDB Theory for SiC

〇Masashi Minami¹ (1.PHENITEC)

5:30 PM - 5:45 PM

△ [13p-B4-6] Failure mechanism analysis of 4H-SiC MOSFETs under high temperature bias test

〇Kosuke Uchida¹, Toru Hiyoshi¹, Taro Nishiguchi¹, Hirofumi Yamamoto¹, Shinji Matsukawa¹, Masaki Furumai¹, Yasuki Mikamura¹ (1.Sumitomo Electric)

5:45 PM - 6:00 PM

△ [13p-B4-7] Effect of NO Annealing on Flatband Voltage Instability in SiC MOS Devices

〇Yoshihito Katsu¹, Takuji Hosoi¹, Yuichiro Nanen², Tsunenobu Kimoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Kyoto Univ.)

6:00 PM - 6:15 PM

[13p-B4-8] Special Features in Stress-Degradation of SiC-MOSFETs from I-V Characteristics

〇Eiichi Murakami¹, Yuuki Shimizu¹, Nozomu Yonemura¹, Youhei Hara¹ (1.Kyusan Univ.)

6:15 PM - 6:30 PM

[13p-B4-9] Gamma-ray Irradiation Effect on SiC MOSFETs with Gate-Bias Voltage

〇Koichi Murata^1,², Satoshi Mitomo^1,², Takuma Matsuda^1,², Takashi Yokoseki^1,², Takahiro Makino², Hiroshi Abe², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd.)

Oral presentation

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

Sat. Mar 14, 2015 9:00 AM - 12:30 PM B4 (6B-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [14a-B4-1] Theoretical Investigation of Chemical Reaction Dynamics in SiC Etching Process via Quantum Chemical Molecular Dynamics Simulation

〇(D)Hiroshi Ito¹, Takuya Kuwahara¹, Yuji Higuchi¹, Nobuki Ozawa¹, Momoji Kubo¹ (1.Tohoku Univ.)

9:15 AM - 9:30 AM

△ [14a-B4-2] Anisotropy of Side-etching Rate in Electrochemical Etching of 4H-SiC

〇Naoto Yamashita¹, Kosuke Sato², Tsunenobu Kimoto², Jun Suda² (1.Kyoto Univ., 2.Dept. of Electro. Sci. & Eng., Kyoto Univ.)

9:30 AM - 9:45 AM

[14a-B4-3] Novel Cap-free Annealing of SiC Trench Wafer using TaC/Ta Composite Materials

〇Norihito Yabuki¹, Satoshi Torimi¹, Satoru Nogami¹, Tadaaki Kaneko² (1.TOYO TANSO, 2.Kwansei Gakuin Univ.)

9:45 AM - 10:00 AM

[14a-B4-4] High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Precise Control of Cooling Rate during Atmospheric Pressure Thermal Plasma Jet Irradiation

〇(M2)KEISUKE MARUYAMA¹, HIROAKI HANAFUSA¹, SHOHEI HAYASHI¹, HIDEKI MURAKAMI¹, SEIICHIRO HIGASHI¹ (1.Hiroshima Univ.)

10:00 AM - 10:15 AM

[14a-B4-5] Al doping of 4H-SiC by Laser Irradiation to Al film deposited on the surface

〇Akihiro Ikeda¹, Rikuho Sumina¹, Hiroshi Ikenoue¹, Tanemasa Asano¹ (1.Kyushu Univ.)

10:15 AM - 10:30 AM

[14a-B4-6] Femtosecond laser irradiation onto SiC substrate in liquid nitrogen

〇Reina Miyagawa¹, Takahiro Nakagawa¹, Osamu Eryu¹ (1.Nagoya Inst. of Tech.)

10:30 AM - 10:45 AM

[14a-B4-7] Electrical Characteristics of SiC Schottky Diode with Ti and TiC Electrodes

〇(B)Tomoyuki Suzuki¹, Mari Okamoto², Shu Munekiyo², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (1.Tokyo Tech. FRC, 2.Tokyo Tech. IGSSE)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[14a-B4-8] High energy ion implantation process on 6 inch 4H-SiC substrates using SiO₂ mask

〇TAKU HORII¹, RYOSUKE KUBOTA¹, KEIJI WADA¹, SO TANAKA¹, TAKESHI SEKIGUCHI¹, YASUKI MIKAMURA¹ (1.Sumitomo Electric Industries, Ltd.)

11:15 AM - 11:30 AM

[14a-B4-9] Characterization of 3.3 kV 4H-SiC MOSFETs

〇Mitsuhiko Sakai¹, Kosuke Uchida¹, Toru Hiyoshi¹, Keiji Wada¹, Masaki Furumai¹, Takashi Tsuno¹, Yasuki Mikamura¹ (1.Sumitomo Electric)

11:30 AM - 11:45 AM

△ [14a-B4-10] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Naruhisa Miura¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp.)

11:45 AM - 12:00 PM

[14a-B4-11] FLR Edge Termination for 3.3 kV SiC-MOSFET

〇Kohei Ebihara^1,², Takaaki Tominaga^1,², Kenji Hamada¹, Shiro Hino^1,², Hiroshi Watanabe^1,², Naruhisa Miura¹, Shuhei Nakata^1,², Satoshi Yamakawa^1,² (1.Mitsubishi Electric, 2.FUPET)

12:00 PM - 12:15 PM

△ [14a-B4-12] Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

〇(DC)Hiroki Niwa¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

12:15 PM - 12:30 PM

[14a-B4-13] New Type of Unipolar SiC Diode

〇Satoshi Tanimoto¹, Kenichi Ueoka¹, Takaya Fujita¹, Kazutoshi Kojima², Toshiharu Makino³, Satoshi Yamasaki³ (1.Nissan ARC, 2.ADPERC-AIST, 3.EETG-AIST)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors

[11p-P2-1~15] 15.6 Group IV Compound Semiconductors

△ [11p-P2-15] Injection of minority carrriers in 4H-SiC/Si HBT structures by using surface-activated bonding

[12a-B4-1~10] 15.6 Group IV Compound Semiconductors

△ [12a-B4-6] SiC for water splitting with photocurrent of 12 mA/W

△ [12a-B4-8] Temperature dependence of Hall effect in p-type 4H-SiC with various doping concentrations

△ [12a-B4-10] Analysis of gate bias dependent carrier distribution of cross-sectioned SiC-DMOSFET by ac biasing using super-higher-order SNDM

[13a-B4-1~10] 15.6 Group IV Compound Semiconductors

△ [13a-B4-7] Detection of Interface Defects in Thermally-grown SiO2/SiC by Cathodoluminescence

▲ [13a-B4-9] Electrically Detected Magnetic Resonance (EDMR) Study on Interface Defects in C-face 4H-SiC Metal-Oxide-Semi-conductor Field Effect Transistors

[13p-B4-1~9] 15.6 Group IV Compound Semiconductors

△ [13p-B4-1] Quantitative Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

△ [13p-B4-2] Understanding of increase/ decrease mechanism of Dit for SiO2/4H-SiC(0001) by low temperature O2 annealing

△ [13p-B4-3] Anomalous difference between field effect mobility and effective mobility on 4H-SiC lateral MOSFET

△ [13p-B4-6] Failure mechanism analysis of 4H-SiC MOSFETs under high temperature bias test

△ [13p-B4-7] Effect of NO Annealing on Flatband Voltage Instability in SiC MOS Devices

[14a-B4-1~13] 15.6 Group IV Compound Semiconductors

△ [14a-B4-1] Theoretical Investigation of Chemical Reaction Dynamics in SiC Etching Process via Quantum Chemical Molecular Dynamics Simulation

△ [14a-B4-2] Anisotropy of Side-etching Rate in Electrochemical Etching of 4H-SiC

△ [14a-B4-10] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions

△ [14a-B4-12] Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

Authentication

△ [13a-B4-7] Detection of Interface Defects in Thermally-grown SiO₂/SiC by Cathodoluminescence

△ [13p-B4-2] Understanding of increase/ decrease mechanism of D_it for SiO₂/4H-SiC(0001) by low temperature O₂ annealing