[F-10-4] Single Grain and Single Grain Boundary Resistance of Pentacene Thin Film Characterized by Nano-scale Electrode Array

Tomihiko Edura、Masashi Nakata、Hiromasa Takahashi、Harumasa Onozato、Jun Mizuno、Ken Tsutsui、Masamitsu Haemori、Kenji Itaka、Hideomi Koinuma、Yasuo Wada (1.Nanotechnology Research Laboratory, Waseda University、2.Graduate School of Nano Science and Technology, Waseda University、3.Materials and Structures Laboratory, Tokyo Institute of Technology、4.CREST, JST)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-5] Improvement of on/off ratio of pentacene static induction transistor with ultra-thin CuPc layer

Yasuyuki Watanabe、Hiroyuki Iechi、Kazuhiro Kudo (1.Optoelectronic Industry and Technology Develepment Association, Advanced Organic Device Project, Chiba Laboratory、2.Advanced Technology R&D Center, Research and Development Group, Ricoh Co. Ltd、3.Department of Electronics and Mechanical Engineering, Faculty of Engineering, Chiba University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-1] Fabrication and Demonstration of Quantum-Dot Cellular Automata Systems

Gary H. Bernstein、Alexandra Imre、Koshala Sarveswaran、Marya Lieberman、Wolfgang Porod (1.Center for Nano Science and Technology、2.Department of Electrical Engineering、3.Department of Chemistry and Biochemistry University of Notre Dame)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-2] Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits

Takahiro Tamura、Isao Tamai、Seiya Kasai、Taketomo Sato、Hideki Hasegawa、Tamotsu Hashizume (1.Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-3] GaAs DH-HEMT channel coupled InAs quantum dot memory device by selective area metal organic vapor phase epitaxy

Devaraj Nataraj、Noboru Ooike、Junichi Motohisa、Takashi Fukui (1.Research Center for Integrated Quantum Electronics, Hokkaido University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-4] Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate

Huang-Ming Lee、Koji Muraki、Edward Yi Chang、Yoshiro Hirayama (1.NTT Basic Research Laboratories, NTT Corporation、2.Department of Materials Science and Engineering, National Chiao-Tung University、3.SORST-JST)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-5] Relaxation Behavior of Sputter Epitaxy Si1-xGex Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RT

Junichi Kubota、Atsushi Hashimoto、Yoshiyuki Suda (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-6] Fabrication of Fluoride Resonant Tunneling Diodes on V-grooved Si(100) Substrates

So Watanabe、Tsuyoshi Sugisaki、Yohei Toriumi、Motoki Maeda、Kazuo Tsutsui (1.Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-7] High Peak-to-Valley Current Ratio of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrates by Nanoarea Local Epitaxy

Tohru Kanazawa、Atsushi Morosawa、Masahiro Watanabe、Masahiro Asada (1.Tokyo Inst. of Tech., Dept. of Electronics and Applied Physics、2.SORST、3.CREST-JST)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-2-1] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor

Masaharu Kobayashi、Masumi Saitoh、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード