Oral presentation

[25a-E104-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E104 (E104)

Masanaga Fukasawa(Sony Semiconductor Solutions), Masanobu Honda(Tokyo Electron Miyagi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[25a-E104-1] Plasma-induced defects ~ Positive effects of Ar ions on low-temperature Si surface passivation~

〇Shota Nunomura¹, Isao Sakata¹ (1.AIST)

9:15 AM - 9:30 AM

△ [25a-E104-2] A Comparative Study on Relationship between Mechanical and Electrical Property Change in Silicon Nitride Films Damaged by Plasma Exposure

〇Takahiro Goya¹, Tomohiro Kuyama^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

9:30 AM - 9:45 AM

[25a-E104-3] Reactive dry etching characteristics of p-GaN surface

〇Shintaro Toda¹, Tatsuhiro Nozue¹, Norio Kanzaki², Kazutsune Miyanaga², Masahiro Terashima³, Shin-ichi Iida³, Yasufumi Fujiwara² (1.ULVAC Inc., 2.Osaka Univ., 3.ULVAC-PHI Inc.)

9:45 AM - 10:00 AM

△ [25a-E104-4] Etching characteristics of gallium nitride for cyclic etching at high temperatures

〇Rikyu Minami¹, Shohei Nakamura^1,2, Atsushi Tanide², Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

10:00 AM - 10:15 AM

[25a-E104-5] Control of stoichiometric ratio of AlGaN by cyclic supply of Ar/F₂ plasma and BCl₃ gas

〇Shohei Nakamura^1,2, Atsushi Tanide^1,2, Takahiro Kimura¹, Soichi Nadahara^1,2, Kenji Ishikawa², Osamu Oda², Masaru Hori² (1.SCREEN Holdings Co., Ltd., 2.Nagoya Univ.)

10:30 AM - 10:45 AM

▲ [25a-E104-6] Molecular dynamics simulation study of F-based atomic layer etching of Si

〇(P)ErinJoy Capdos Tinacba¹, Satoshi Hamaguchi¹ (1.Osaka University)

10:45 AM - 11:00 AM

[25a-E104-7] Impact of bias supply timing on etched feature profiles in the C₄F₈ and SF₆ cycle process

〇Taito Yoshie¹, Takayoshi Tsutsumi¹, Kenji Ishikawa¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

11:00 AM - 11:15 AM

[25a-E104-8] Time-resolved measurements of ions in a dual-frequency capacitively-coupled Ar/C₄F₈/O₂ pulsed plasma by mass spectrometry

〇(M1)Yuto Seki¹, Haruhito Kato¹, Schuichi Kuboi¹, Haruka Suzuki^1,2, Hirotaka Toyoda^1,2,3 (1.Nagoya Univ., 2.cLPS, Nagoya Univ., 3.NIFS)

11:15 AM - 11:30 AM

△ [25a-E104-9] Measurement of angular distribution by imaging method of high-speed particles incident on an electrode from a dual-frequency capacitively-coupled plasma

〇Keita Ichikawa¹, Haruka Suzuki¹, Hirotaka Toyoda^1,2 (1.Nagoya Univ., 2.NIFS)

11:30 AM - 12:00 PM

[25a-E104-10] [The 43rd JSAP Paper Award Speech] Formation mechanism of sidewall striation in high-aspect-ratio hole etching

〇Mitsuhiro Omura¹, Junichi Hashimoto¹, Takahiro Adachi¹, Yusuke Kondo¹, Masao Ishikawa¹, Junko Abe¹, Itsuko Sakai¹, Hisataka Hayashi¹, Makoto Sekine², Masaru Hori² (1.Kioxia, 2.Nagoya Univ.)

Oral presentation

[25p-E104-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Mar 25, 2022 1:00 PM - 6:30 PM E104 (E104)

Akihisa Ogino(Shizuoka Univ.), Toru Harigai(Toyohashi Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[25p-E104-1] Room-temperature Growth of HfO₂/SiO₂ film by Neutral Beam Enhanced Atomic Layer Deposition

〇Daisuke Ohori¹, Beibei Ge¹, Yi-Ho Chen², Takuya Ozaki¹, Kazuhiko Endo³, Yiming Li², Jenn-Hwan Tarng², Seiji Samukawa^1,2,4 (1.IFS, Tohoku Univ., 2.NYCU, 3.AIST, 4.AIMR, Tohoku Univ.)

1:15 PM - 1:30 PM

[25p-E104-2] Low energy ion reactions of SiN plasma-enhanced atomic layer deposition

〇Tomoko Ito¹, Hidekazu Kita¹, Ayuta Suzuki², Munehito Kagaya², Masaaki Matsukuma², Kazuyoshi Matsuzaki², Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Tokyo Electron Technology Solutions Ltd.)

1:30 PM - 1:45 PM

[25p-E104-3] Fabrication of aluminum nitride with low-temperature atomic layer deposition

〇(D)Kentaro Saito¹, Kazuki Yoshida¹, Masanori Miura², Kensaku Kanomata², Bashir Ahmmad¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

1:45 PM - 2:00 PM

[25p-E104-4] Macro Particle Adhesion as a Function of Distance from Cathode in TiN Film Formation by Vacuum Arc Deposition

〇Yoshinori Saiki¹, Junpei Kito¹, Yuki Hashimoto¹, Takahiro Bando¹, Toru Harigai¹, Hirofumi Takikawa¹, Hiroki Gima², Hiroaki Sugita² (1.Toyohashi Univ. Technol., 2.OSG Coating Service Co., Ltd)

2:00 PM - 2:15 PM

[25p-E104-5] Mass spectrometric measurement of radical and positive ion species incident into substrate in low-pressure RF plasmas in tetraethoxysilane gases

〇(M2)Koichi Ishii¹, Shun Sasaki¹, Mao Kamiyama¹, Hu Li², Kazuki Denpoh², Akinori Oda¹ (1.Chiba Institute of Technology, 2.Tokyo Electron Technology Solutions Ltd.)

2:15 PM - 2:30 PM

[25p-E104-6] Computational analysis of rare gas diluted tetraethoxysilane (TEOS) plasmas for clarification of deposition mechanism in PECVD process

〇HU LI¹, Koichi Ishii², Shun Sasaki², Mao Kamiyama², Akinori Oda², Kazuki Denpoh¹ (1.Tokyo Electro Technology Solutions, 2.Chiba Inst. Technol.)

2:30 PM - 2:45 PM

[25p-E104-7] Residual Stress and IR Transmittance of SiO₂ Thin Films Coated with HC-PECVD

〇Tsuyoshi Otani¹, Takumi Ogiri², Hidehiko Yoda² (1.AIOT, 2.Utsunomiya Univ.)

2:45 PM - 3:00 PM

[25p-E104-8] Ion conductivity of LiAlGePO electrolyte-solid film by plasma sputtering for all-solid-state lithium-ion batteries

〇Giichiro Uchida^1,2, Junki Hayashi¹, Yuma Habu¹, Kenta Nagai¹, Misao Kiga¹, Teruya Yamada¹ (1.Meijo Univ. Fac. Sci., 2.Meijo Univ. Next Gen)

3:00 PM - 3:15 PM

△ [25p-E104-9] Investigation of Transitional Behaviors in Boron Nitride Film Properties Induced by sp-Bonded Nano-Network Structure Change

〇Takashi Hamano^1,5, Takayuki Matsuda¹, Yuya Asamoto¹, Masao Noma², Shigehiko Hasegawa³, Michiru Yamashita⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.SHINKO SEIKI. Co., LTD., 3.Osaka Univ., 4.Hyogo Pref. Inst. Technol., 5.JSPS Research Fellow)

3:15 PM - 3:30 PM

△ [25p-E104-10] Electrical characterization of adhesion property degradation in BN/Si devices

〇(D)Takayuki Matsuda¹, Takashi Hamano¹, Yuya Asamoto¹, Masao Noma², Michiru Yamashita³, Shigehiko Hasegawa⁴, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.SHINKO SEIKI. Co., LTD., 3.Hyogo Prefectural Inst., of Technol., 4.Osaka Univ.)

3:45 PM - 4:00 PM

[25p-E104-11] Thin films of PTFE plasma polymers with recurring hydrophobic and hydrophilic properties

〇Kohshi Taguchi¹, Mina Tomikawa¹, Ko Minoura¹, Motohiro Yamahara¹, Kazuyuki Noborio¹ (1.SAKIGAKE-Semiconductor Co., Ltd.)

4:00 PM - 4:15 PM

[25p-E104-12] Effect of Noble Gas on a-C:H Film Deposition by Tailored Voltage Waveform-PECVD

〇Daiki Nagamatsu¹, Toshiaki Arima¹, Michihiro Otaka¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹, Hiroshi Otomo², Takahiro Shindo², Satoshi Tanaka², Tatsuo Matsudo² (1.Kyushu Univ., 2.Tokyo Electron Technology Solutions Limited)

4:15 PM - 4:30 PM

[25p-E104-13] Relationship between deposition precursors and film properties of hydrogenated amorphous carbon deposited
by C₃H₆ / H₂ plasma

Jumpei Kurokawa¹, Tadashi Mitsunari^2,3, 〇Hiroki Kondo³, Takayoshi Tsutsumi³, Makoto Sekine³, Kenji Ishikawa³, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Tokyo Electron Technology Solutions, 3.Nagoya Univ. Center for Low-temperature Plasma Science)

4:30 PM - 4:45 PM

△ [25p-E104-14] Infrared Spectroscopy of Substrate Bias Effects on Film Deposition during Acetylene Plasm

〇(M1)Tatsuo Nakai¹, Atsuya Kuwada², Ryou Sasamoto², Masanori Shinohara², Takashi Matsumoto³, Satoshi Tanaka³ (1.Fukuoka Univ., 2.Fukuoka Univ., 3.Tokyo Electron Technology Solutions Co. Ltd.)

4:45 PM - 5:00 PM

[25p-E104-15] Characterization of a-C:F films formed at low temperature on a copper substrate by low-energy electron irradiation on c-C₄F₈ condensed layer.

〇(M1)Koki Akiyama¹, Tetsuya Sato¹ (1.Univ. of Yamanashi)

5:00 PM - 5:15 PM

[25p-E104-16] Low temperature synthesis of a-SiC:F thin films by electron irradistion on c-C₄F₈/Si(CH₃)₄ mixed condensed layer.

〇(M2)Shuntaro Toda¹, Tetsuya Sato¹ (1.Univ. of Yamanashi)

5:15 PM - 5:30 PM

[25p-E104-17] Effect of the process pressure on diamond synthesis by Microwave plasma hydrogen induced chemical transport

〇Takumi Ito¹, Hiroaki Kakiuchi¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

5:30 PM - 5:45 PM

△ [25p-E104-18] Influence of driving frequency on the surface temperature of a plasma device with surface micro electrode array

〇Kaishu Imanaka¹, Yoshito Manabe¹, Tatsuru Shirafuji¹, Jun-Seok Oh¹ (1.Osaka City Univ.)

5:45 PM - 6:00 PM

△ [25p-E104-19] Effects of discharge-off period on CO₂ methanation in pulsed-discharge plasmas

〇Taiki Hasegawa¹, Masashi Ideguchi¹, Daisuke Yamashita¹, Susumu Toko², Kunihiro Kamataki¹, Kazunori Koga^1,3, Masaharu Shiratani¹ (1.Kyushu Univ., 2.Osaka Univ., 3.NINS)

6:00 PM - 6:15 PM

[25p-E104-20] Hydrogenation and Reduction Treatment of Magnesium-Based Materials

〇Masahiko Nagasaka¹, Akiomi Uchiyama¹, Yasutaka Haga¹, Ryohei Kurebayashi², Manatsu Kishi², Kokoro Suzumura², Akihisa Ogino² (1.SINTOKOGIO, LTD., 2.Shizuoka Univ.)

6:15 PM - 6:30 PM

[25p-E104-21] Effect of Residence Time of Hydrogen Gas in Hydrogen Plasma Treatment of Mg Oxide

〇Manatsu Kishi¹, Ryohei Kurebayashi¹, Kokoro Suzumura¹, Masahiko Nagasaka², Akiomi Uchiyama², Yasutaka Haga², Akihisa Ogino¹ (1.shizuoka Univ., 2.SINTOKOGIO, LTD.)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25a-E104-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25a-E104-1] Plasma-induced defects ~ Positive effects of Ar ions on low-temperature Si surface passivation~

△ [25a-E104-2] A Comparative Study on Relationship between Mechanical and Electrical Property Change in Silicon Nitride Films Damaged by Plasma Exposure

[25a-E104-3] Reactive dry etching characteristics of p-GaN surface

△ [25a-E104-4] Etching characteristics of gallium nitride for cyclic etching at high temperatures

[25a-E104-5] Control of stoichiometric ratio of AlGaN by cyclic supply of Ar/F₂ plasma and BCl₃ gas

▲ [25a-E104-6] Molecular dynamics simulation study of F-based atomic layer etching of Si

[25a-E104-7] Impact of bias supply timing on etched feature profiles in the C₄F₈ and SF₆ cycle process

[25a-E104-8] Time-resolved measurements of ions in a dual-frequency capacitively-coupled Ar/C₄F₈/O₂ pulsed plasma by mass spectrometry

△ [25a-E104-9] Measurement of angular distribution by imaging method of high-speed particles incident on an electrode from a dual-frequency capacitively-coupled plasma

[25a-E104-10] [The 43rd JSAP Paper Award Speech] Formation mechanism of sidewall striation in high-aspect-ratio hole etching

[25p-E104-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25p-E104-1] Room-temperature Growth of HfO₂/SiO₂ film by Neutral Beam Enhanced Atomic Layer Deposition

[25p-E104-2] Low energy ion reactions of SiN plasma-enhanced atomic layer deposition

[25p-E104-3] Fabrication of aluminum nitride with low-temperature atomic layer deposition

[25p-E104-4] Macro Particle Adhesion as a Function of Distance from Cathode in TiN Film Formation by Vacuum Arc Deposition

[25p-E104-5] Mass spectrometric measurement of radical and positive ion species incident into substrate in low-pressure RF plasmas in tetraethoxysilane gases

[25p-E104-6] Computational analysis of rare gas diluted tetraethoxysilane (TEOS) plasmas for clarification of deposition mechanism in PECVD process

[25p-E104-7] Residual Stress and IR Transmittance of SiO₂ Thin Films Coated with HC-PECVD

[25p-E104-8] Ion conductivity of LiAlGePO electrolyte-solid film by plasma sputtering for all-solid-state lithium-ion batteries

△ [25p-E104-9] Investigation of Transitional Behaviors in Boron Nitride Film Properties Induced by sp-Bonded Nano-Network Structure Change

△ [25p-E104-10] Electrical characterization of adhesion property degradation in BN/Si devices

[25p-E104-11] Thin films of PTFE plasma polymers with recurring hydrophobic and hydrophilic properties

[25p-E104-12] Effect of Noble Gas on a-C:H Film Deposition by Tailored Voltage Waveform-PECVD

[25p-E104-13] Relationship between deposition precursors and film properties of hydrogenated amorphous carbon deposited
by C₃H₆ / H₂ plasma

△ [25p-E104-14] Infrared Spectroscopy of Substrate Bias Effects on Film Deposition during Acetylene Plasm

[25p-E104-15] Characterization of a-C:F films formed at low temperature on a copper substrate by low-energy electron irradiation on c-C₄F₈ condensed layer.

[25p-E104-16] Low temperature synthesis of a-SiC:F thin films by electron irradistion on c-C₄F₈/Si(CH₃)₄ mixed condensed layer.

[25p-E104-17] Effect of the process pressure on diamond synthesis by Microwave plasma hydrogen induced chemical transport

△ [25p-E104-18] Influence of driving frequency on the surface temperature of a plasma device with surface micro electrode array

△ [25p-E104-19] Effects of discharge-off period on CO₂ methanation in pulsed-discharge plasmas

[25p-E104-20] Hydrogenation and Reduction Treatment of Magnesium-Based Materials

[25p-E104-21] Effect of Residence Time of Hydrogen Gas in Hydrogen Plasma Treatment of Mg Oxide

Authenticate

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[25a-E104-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [25a-E104-2] A Comparative Study on Relationship between Mechanical and Electrical Property Change in Silicon Nitride Films Damaged by Plasma Exposure

△ [25a-E104-4] Etching characteristics of gallium nitride for cyclic etching at high temperatures

▲ [25a-E104-6] Molecular dynamics simulation study of F-based atomic layer etching of Si

△ [25a-E104-9] Measurement of angular distribution by imaging method of high-speed particles incident on an electrode from a dual-frequency capacitively-coupled plasma

[25p-E104-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [25p-E104-9] Investigation of Transitional Behaviors in Boron Nitride Film Properties Induced by sp-Bonded Nano-Network Structure Change

△ [25p-E104-10] Electrical characterization of adhesion property degradation in BN/Si devices

△ [25p-E104-14] Infrared Spectroscopy of Substrate Bias Effects on Film Deposition during Acetylene Plasm

△ [25p-E104-18] Influence of driving frequency on the surface temperature of a plasma device with surface micro electrode array

△ [25p-E104-19] Effects of discharge-off period on CO2 methanation in pulsed-discharge plasmas

Authenticate

△ [25p-E104-19] Effects of discharge-off period on CO₂ methanation in pulsed-discharge plasmas