The Japan Society of Applied Physics

591 results (1 - 10)

[A-1-2] PMOSFET Vth Modulation Technique using Fluorine Treatment through ALD-TiN Suitable for CMOS Devices

K. Tai, S. Yamaguchi, K. Tanaka, T. Hirano, I. Oshiyama, S. Kazi, T. Ando, M. Nakata, M. Yamanaka, R. Yamamoto, S. Kanda, Y. Tateshita, H. Wakabayashi, Y. Tagawa, M. Tsukamoto, H. Iwamoto, M. Saito, N. Nagashima, S. Kadomura (1.Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes

C. S. Park, S. C. Song, C. Burham, H. B. Park, H. Niimi, B. S. Ju, J. Barnett, C. Y. Kang, P. Lysaght, G. Bersuker, R. Choi, H. K. Park, H. Hwang, B. H. Park, S. Kim, P. Kirsch, B. H. Lee, R. Jammy (1.UT/Austin, 2.Samsung Assignee, 3.TI Assignee, 4.GIST, Korea, 5.Poongsan Microtec, 6.IBM Assignees)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (1 - 10)