587件中(1 - 10)

[A-1-1] Control of Interface Properties of High-k/Ge with GeO₂ Interface Layer (Invited)

K. Kita¹、T. Nishimura¹、K. Nagashio¹、A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-2] High-k Gated Germanium Metal-Oxide-Semiconductor Capacitors with GeO₂ Surface Passivation and Fluorine Incorporation

R. Xie^1,2、W. He¹、M. Yu²、C. Zhu¹ (1.National Univ. of Singapore、2.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-3] Improvement of Interface Properties of GeO₂/Ge MOS Structures Fabricated by Thermal Oxidation

T. Sasada¹、H. Matsubara¹、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-4] Amorphous High-k LaLuO₃ Dielectric Film for Ge MIS Gate Stack

T. Tabata¹、K. Kita¹、A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-5] Reaction Kinetics Control on Thermal Oxidation Process of Ge in High Pressure Oxygen

C. H. Lee¹、T. Nishimura¹、K. Nagashio¹、K. Kita¹、A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-1] Performance and Reliability of High-k/Metal Gate Stacks: Interfacial Layer Defects (Invited)

G. Bersuker¹ (1.SEMATECH, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-2] Impact of the Activation Annealing Temperature on the Performance, NBTI and TDDB Lifetime of High-k/Metal Gate Stack pMOSFETs

M. Sato¹、T. Aoyama¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric

C. Y. Kang¹、C. S. Park¹、H. K. Park¹、S. C. Song¹、R. Choi¹、B. H. Park²、B. Woo²、K. T. Lee³、J. Lee⁴、H. Hwang⁴、G. Bersuker¹、B. H. Lee¹、H. H. Tseng¹、R. Jammy⁵ (1.SEMATECH、2.Poongsan Microtech, USA、3.POSTECH、4.GIST, Korea、5.IBM Assignee, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-4] V_t Variation Suppressed Al₂O₃-Capped HfO₂ Gate Dielectrics for Low V_t pMISFETs with High-k/Metal Gate Stacks

T. Morooka¹、T. Matsuki¹、N. Mise¹、S. Kamiyama¹、T. Nabatame¹、T. Eimori¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-5] Generation of a New Interface-State Associated with Ultra-Thin Gate Dielectrics/Silicon under Electric Stress

H. Mori¹、H. Matsuyama¹、S. Watanabe² (1.Fujitsu Microelectronics Ltd.、2.Fujitsu Labs. Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(1 - 10)