[M-1-6] A Novel Chemical Lift-Off Process based on Embedded Nano-rods Template

S. S. Yen¹、W. Y. Chen¹、J. R. Chang¹、S. P. Chang¹、P. M. Tu¹、Y. C. Hsu¹、Y. J. Li¹、Y. C. Chen¹、K. P. Sou¹、C. Y. Chang¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-1] Multi-dimensional Nanostructured Oxide Devices

H. Tanaka¹、A. Ono¹、T. Kusizaki¹、K. Fujiwara¹、A. Hattori¹ (1.Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-2] Crystal growth and optical characterizations of nonpolar m-plane ZnO on the m-plane sapphire substrate by PLD

C. C. Kuo¹、B. H. Lin^1,2、W. R. Liu²、C. H. Hsu^1,2、W. F. Hsieh¹ (1.National Chiao Tung Univ.、2.National Synchrotron Radiation Research Center , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-3] Processing Induced Pre-Existing Vacated (Empty) O-atom Defect Sites in Remote Plasma Deposited GeO₂ and SiO₂ Gate Dielectrics

G. Lucovsky¹、J. Kim¹、K. Wu¹、D. Zeller¹、B. Papas¹、J. L. Whitten¹ (1.North Carolina State Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-4] Epitaxy of Spinel Zn₂TiO₄ (111) on GaN (001) for MOS Application

S. W. Fu¹、J. C. Wu¹、C. Y. Hsiao¹、K. T. Hung¹、S. H. Wu¹、H. J. Chen¹、H. T. Wu¹、C. F. Shih¹ (1.National Cheng Kung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-5] Functional Oxides Integrated Epitaxially onto Semiconductors

R. Droopad¹、G. Radhakrishnan¹、R. Contreras-Guererro¹、W. Priyantha¹、N. Theodoropoulou¹ (1.Texas State Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-2-6] Growth of Aligned ZnO Nanorod on Mg_0.3Zn_0.7O Thin Film Template by Immersion Method

S. Muhanad¹、S. A. Bakar¹、M. H. Mamat¹、M. Rusop¹ (1.Univ. Tech. MARA , Malaysia)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-1] Morphological and compositional interface stability of metastable ternary and quaternary (Ga,In)(As,Sb) quantum wells

A. Trampert¹ (1.Paul-Drude-Institute , Germany)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-2] High-speed three-dimentional reciprocal-space mapping during MBE growth of InGaAs

W. Hu¹、H. Suzuki²、T. Sasaki³、M. Kozu⁴、M. Takahasi^1,4 (1.JAEA、2.Univ. of Miyazaki、3.Toyota Technological Inst.、4.Univ. of Hyogo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-3-3] Effect of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy

M. Mori¹、Y. Yasui¹、K. Nakayama¹、K. Nakatani¹、K. Maezawa¹ (1.Univ. of Toyama , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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