[D-4-1] Device characteristics of planar-type In_0.53Ga_0.47As channel band-to-band tunneling MOSFETs

R. Iida¹、S. H. Kim¹、M. Yokoyama¹、N. Taoka¹、S. H. Lee¹、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-2] Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultra-Low Power Logic Circuits

M. C. Sun^1,2、S. W. Kim¹、H. W. Kim¹、G. Kim¹、H. Kim¹、J.H. Lee¹、H. Shin¹、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-3] Tunnel Field-Effect Transistor using InAs Nanowire/Si Heterojunction

K. Tomioka^1,2、T. Fukui¹ (1.Hokkaido Univ.、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-4-4] Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

K. L. Low¹、C. Zhan¹、G. Han¹、Y. Yang¹、K.H. Goh¹、P. Guo¹、E.H. Toh²、Y.C. Yeo¹ (1.National Univ. of Singapore、2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-1] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET

H. Suzuki¹、R. Kuroda¹、A. Teramoto¹、A. Yonezawa¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-2] Random Trap Fluctuation (RTF) Induced Vth Variability and the Impact on the Reliability of Strained-Silicon CMOS Devices

E. R. Hsieh¹、C. Y. Cheng¹、S. S. Chung¹、C. H. Tsai²、R. M. Huang²、C. T. Tsai²、C. W. Liang² (1.National Chiao Tung Univ.、2.UMC , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-3] Uniaxial Strain Effect on Flicker Noise and Random Telegraph Noise of SiC Strained nMOSFETs in 40nm Technology

K. L. Yeh¹、C. S. Chang¹、J. C. Guo¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-5-4] Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs

Y. Kamakura^1,2、T. Himukashi¹、H. Tsuji¹、K. Taniguchi¹ (1.Osaka Univ.、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-1] Advanced Foundry CMOS: From Planar into the Multi-Gate Era

A. Wei¹ (1.GLOBALFOUNDRIES , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-2] Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

K. Ikeda¹、M. Oda¹、T. Irisawa¹、Y. Kamimuta¹、Y. Moriyama¹、T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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