[P-1-10] Analysis of Raman Spectra from Offset Spacer Region of Si-MOSFET Structure using Simulated Stress Tensor and Absorbed Light Intensity by FDTD Simulation

A. Satoh¹、T. Tada¹、V. Poborchii¹、T. Kanayama¹、S. Satoh²、H. Arimoto¹ (1.AIST、2.Fujitsu Semiconductor Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-11] Chemical Bonding States of As in Si Shallow Junctions Detected by Soft X-ray Photoelectron Spectroscopy and their Profiles

J. Kanehara¹、Y. Miyata¹、H. Nohira²、Y. Izumi³、T. Muro³、T. Kinoshita³、P. Ahmet¹、K. Kakushima¹、K. Tsutsui¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech、2.Tokyo City Univ.、3.JASRI/Spring-8 , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-12] Comprehensive Understanding of Flatband Voltage Shift Based on Energy Band Alignment of the Whole Metal/high-k/SiO₂/Si Stack

X. Wang¹、W. Wang¹、K. Han¹、J. Zhang²、X. Ma¹、J. Xiang¹、D. Chen¹、T. Ye¹ (1.Chinese Academy of Sci.、2.North China Univ. of Tech. , China)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-13] Lateral Large-Grained Low-Temperature Polycrystalline Silicon-Germanium Thin-Film Transistors on Glass Substrate

Y. Okabe¹、K. Kondo¹、J. Suzuki²、K. Kitahara²、A. Hara¹ (1.Tohoku Gakuin Univ.、2.Shimane Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-14] Enhanced Sidewall Growth (ESG) process: towards PEALD with conformality above 100%

S. Ueda¹、A. Fukazawa¹、H. Fukuda¹、N. Kobayashi¹ (1.ASM Japan K.K. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-15] Mean time to failure distribution in thin oxide film: Observation at nano and devices scale and modelling using a filamentary growth model

P. Delcroix^1,2、S. Blonkowski¹、M. Kogelschatz²、M. Rafik¹ (1.STMicroelectronics、2.CNRS , France)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-16] Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel

C. H. Cho¹、S. K. Lim¹、C. G. Kang¹、Y. G. Lee¹、H. J. Hwang¹、E. Park¹、B. H. Lee¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-17] Novel activation method of B by soft X-ray undulator

T. Fukuoka¹、A. Heya¹、N. Matsuo¹、K. Kanda¹、T. Noguchi² (1.Univ. of Hyogo、2.Univ. of the Ryukyus , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-18] Impact of Zirconia addition for ALD Hafina in HKMG Device Fabricated GF vs. GL

C. K. Chiang^1,3、C. H. Wu²、H. Y. Huang¹、J. F. Lin³、C. L. Yang³、J. Y. Wu³、S. J. Wang¹ (1.National Cheng Kung Univ.、2.Chung Hua Univ.、3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-19L] Fermi Level Depinning for Metal/Germanium Schottky Junction by CF₄ Plasma Treatment

J. R. Wu¹、C. Y. Hou¹、M. L. Wu¹、C. C. Lin¹、L. L. Chen¹、Y. H. Wu¹ (1.National Tsing Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

741件中(471 - 480)

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