[E-3-3] On the Si Surface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology

R. Kuroda¹、A. Teramoto¹、X. Li¹、T. Suwa¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-4] High Quality and Low Thermal Budget Silicon Nitride Deposition Using PECVD for Gate Spacer, Silicide Block and Contact Etch Stopper

Y. Nakao¹、R. Kuroda¹、H. Tanaka¹、A. Teramoto¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-1] Challenges to Strained Source/Drain and Advanced Silicide for High Performance Transistors

T. Yamaguchi¹ (1.Renesas Electronics Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-2] Reduction of NiGe/nGe Schottky Barrier Height by S and P Co-introduction for Metal Source/Drain in Ge nMOSFETs

M. Koike¹、Y. Kamimuta¹、T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-3] Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing

H. Itokawa¹、S. Teehan²、J. Li²、P. W. DeHaven³、N. Berliner²、J. J. Demarest²、N. R. Klymko³、P. Ronsheim³、V. Paruchuri² (1.Toshiba America Electronic Components, Inc.、2.IBM Research at Albany Nanotech Center、3.IBM Semiconductor Research and Development Center , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-4-4] A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions

T. Nishimura^1,2、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-1] Formation and Properties of Epitaxial NiGe/Ge(110) Contacts

J. Yokoi¹、O. Nakatsuka¹、S. Zaima¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-2] Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

H. S. Shin¹、S. K. Oh¹、M. H. Kang^1,2、H. M. Kwon¹、J. Oh³、P. Majhi³、R. Jammy³、G. W. Lee¹、H. D. Lee¹ (1.Chungnam National Univ.、2.National NanoFab Center , Korea、3.SEMATECH , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-5-3] Marked Suppression of the Fermi-level Pinning at Atomically Matched Fe₃Si/p-Ge(111) Contacts

K. Kasahara¹、S. Yamada¹、M. Miyao¹、K. Hamaya^1,2 (1.Kyushu Univ.、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-1] Hybrid-Formation of (100), (110), and (111) Ge-on-Insulator Structures on (100) Si Platform

M. Kurosawa^1,2、T. Sadoh¹、M. Miyao¹ (1.Kyushu Univ.、2.JSPS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード