[P-12-8] Formation of Nitrogen Vacancy Adjoining to Gd Ion Doped in GaN

D. Abe¹、K. Higashi¹、S. Emura¹、Y. K. Zhou¹、S. Hasegawa¹、H. Asahi¹ (1.Osaka Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-9] Effect of GaAs Surface Structure on Tunneling Anisotropic Magnetoresistance in Epitaxial Co₅₀Fe₅₀/n-GaAs Junctions

T. Uemura¹、T. Akiho¹、M. Harada¹、K. Matsuda¹、M. Yamamoto¹ (1.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-10] Different magnetic properties of L1₀-FePt grown on sputtered and EB deposited MgO / GaAs structures

R. Ohsugi¹、M. Kohda^1,2、T. Seki¹、M. Mizuguchi¹、K. Takanashi¹、J. Nitta¹ (1.Tohoku Univ.、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-11] Tight-binding calculation of conductance and magnetoresistance in disordered FM/graphene/FM junctions

S. Honda¹、R. Sato²、A. Yamamura²、T. Hiraiwa²、H. Itoh¹、J. Inoue² (1.Kansai Univ.、2.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-12] High-Speed-Search Nonvolatile TCAM Using MTJ Devices

S. Matsunaga¹、A. Katsumata¹、M. Natsui¹、T. Endoh¹、H. Ohno¹、T. Hanyu¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-13] Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer

A. Makarov¹、V. Sverdlov¹、D. Osintsev¹、S. Selberherr¹ (1.TU Wien , Austria)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-14] Stochastic State Transition of a Spin Torque Nano Oscillator

K. Nakada¹、S. Yakata^1,2、T. Kimura^1,2 (1.Kyushu Univ.、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-15] Spin-Photon Memory and Spin Transistor with Floating Gate

V. Zayets¹、H. Saito¹、S. Yuasa¹、K. Ando¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-12-16L] Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 50 K

S. Nakanishi¹、K. Sasayama¹、Y. Oyanagi¹、R. Yamaguchi¹、S. Lu²、L. H. Li³、A. Fiore⁴、A. Tackeuchi¹ (1.Waseda Univ. , Japan、2.Chinese Academy of Sci. , China、3.Ecole Polytechnique Federale de Lausanne , Switzerland、4.Eindhoven Univ. of Tech. , Netherlands)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-1] Fabrication and Characterization of InP Nanowire Light Emitting Diodes

S. Maeda¹、K. Tomioka^1,2、S. Hara¹、J. Motohisa¹ (1.Hokkaido Univ.、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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