[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al₂O₃/InGaAs MOS Properties

T. Hoshii¹、S. Lee²、R. Suzuki¹、N. Taoka¹、M. Yokoyama¹、H. Yamada²、W. Jevasuwan³、M. Hata²、T. Yasuda³、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Sumitomo Chemical Co., Ltd.、3.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-5] Controlling anion composition at MIS interfaces on III-V channels by plasma processing

W. Jevasuwan¹、Y. Urabe¹、T. Maeda¹、N. Miyata¹、T. Yasuda¹、A. Ohtake²、H. Yamada³、M. Hata³、S. Lee⁴、T. Hoshii⁴、M. Takenaka⁴、S. Takagi⁴ (1.AIST、2.NIMS、3.Sumitomo Chemical Co., Ltd.、4.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-6] Formation of Ultra-thin and Uniform Ni-InGaAs Alloyed Contact for Scaled Metal S/D InGaAs MOSFETs

T. Irisawa¹、M. Oda¹、T. Tezuka¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-1] Silicon-On-Insulator Fabrication Using Si/HfO₂/Si Epitaxial Structure

S. Migita¹、H. Ota¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-2] Enabling epitaxy on ultrathin implanted SOI

L. Grenouillet¹、N. Possémé¹、S. Ponoth²、N. Loubet³、V. Destefanis¹、Y. Le Tiec¹、S. Mehta²、A. Kumar²、Q. Liu³、B. Haran²、K. Cheng²、N. Berliner²、J. Fullam²、J. Kuss²、G. Shahidi²、O. Faynot¹、B. Doris²、M. Vinet¹ (1.CEA-LETI , FRANCE、2.IBM、3.STMicroelectronics , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-3] Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET

T. Hayashida^1,2、K. Endo³、Y. X. Liu³、S. O'uchi³、T. Matsukawa³、W. Mizubayashi³、S. Migita³、Y. Morita³、H. Ota³、H. Hashiguchi¹、D. Kosemura¹、T. Kamei¹、J. Tsukada³、Y. Ishikawa³、H. Yamauchi³、A. Ogura¹、M. Masahara^1,3 (1.Meiji Univ.、2.JSPS、3.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-4L] Extremely scaled (~0.2 nm) equivalent oxide thickness of higher-k ALD-HfO₂ gate stacks

Y. Morita¹、S. Migita¹、W. Mizubayashi¹、H. Ota¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-1] Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) - Present and Future -

H. Ohno¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-2] Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs

T. Ohsawa¹、F. Iga¹、S. Ikeda¹、T. Hanyu¹、H. Ohno¹、T. Endoh¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-1-3] A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MTJ

H. Koike¹、T. Endoh¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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