[P-13-22] Improvement of transfer characteristics for PZT-CNT-FET by ionic liquid

S. Kataoka¹、T. Arie^1,2、S. Akita^1,2 (1.Osaka Prefecture Univ.、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-23] Strain Dependence of the Electronic Conductivity of Carbon Nanotubes and Graphene Sheets

M. Ohnishi¹、K. Suzuki¹、H. Miura¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-24] Analysis of FET Operation Mechanism in SWNT Networks Using Scanning Gate Microscopy

X. Wei¹、K. Maeda¹、T. Yahagi¹、S. Shimozono¹、M. Matsunaga¹、N. Aoki¹、J. P. Bird²、Y. Ochiai¹ (1.Chiba Univ. , Japan、2.Univ. at Buffalo , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-25] Optimized Composite Film of Polypyrrole and Functionalized Multi-Walled Carbon Nanotubes as an Electrode Material of Supercapacitors

X. Sun¹、Y. Xu¹、J. Wang¹、S. Mao¹ (1.Xi'an Jiaotong Univ. , China)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-26] In Situ TEM Structural Characterization of Pristine and Composite Ion-induced Carbon Nanofibers in Field Electron Emission Process

M. Zamri^1,2、P. Ghosh¹、M. Sasase³、Y. Hayashi¹、M. Tanemura¹ (1.Nagoya Inst. of Tech , Japan、2.Univ. Tech., Malaysia , Malaysia、3.Wakasawan Energy Res. Center , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-27] Interfaces of High-k Gate Insulator in Carbon Nanotube FETs

K. Suzuki¹、Y. Ohno¹、S. Kishimoto¹、T. Mizutani¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-13-28] Observation of n-type conduction in CNTFETs with Au contacts in vacuum

H. Imaeda¹、S. Ishii¹、S. Kishimoto¹、Y. Ohno¹、T. Mizutani¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-14-1] Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures

H. Lee^1,5、N. Sawamoto^1,5、T. Tachibana^1,5、N. Ikeno^1,5、K. Arafune^2,5、H. Yoshida^2,5、S. Satoh^2,5、K. Matsumoto³、K. Takahashi³、T. Chikyow⁴、A. Ogura^1,5 (1.Meiji Univ.、2.Univ. of Hyogo、3.Tokyo Electron Ltd.、4.NIMS、5.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-14-2] Surface Recombination of Crystalline Silicon Substrates Passivated by Atomic Layer Deposited AlO_x

K. Arafune^1,5、S. Miki^1,5、R. Matsutani^1,5、J. Hamano^1,5、H. Yoshida^1,5、T. Tachibana^2,5、A. Ogura^2,5、K. Matsumoto³、K. Takahashi³、Y. Ohshita^4,5、S. Satoh^1,5 (1.Univ. of Hyogo、2.Meiji Univ.、3.Tokyo Electron Ltd.、4.Toyota Technological Inst.、5.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-14-3] Optimization of a-Si/c-Si heterojunction solar cells by BF₂ ion implantation

T. H. Tsai¹、Y. C. Wu¹、C. H. Chen¹ (1.National Tsing Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード