[D-6-3] Extremely Small Within-Device Variability in Intrinsic Channel Tri-Gate Silicon Nanowire MOSFETs

K. Mao¹、T. Mizutani¹、A. Kumar¹、T. Saraya¹、T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-6-4] Enhanced Performance of Tri-Gate Transistors with Gnox Using Optimized Novel SOI Realization Technology

S. H. Kim^1,2、H. J. Bae¹、C. W. Oh¹、D. W. Kim¹、S. Yamada¹、G. Y. Jin¹、Y. Roh² (1.Samsung Electronics、2.Sungkyunkwan Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-1] Extremely Thin SOI (ETSOI) - a Planar CMOS Technology for System-on-chip Applications

K. Cheng¹、A. Khakifirooz¹、P. Kulkarni¹、S. Ponoth¹、B. Haran¹、A. Kumar¹、T. Adam¹、A. Reznicek¹、N. Loubet²、H. He¹、J. Kuss¹、M. Wang¹、T. M. Levin¹、F. Monsieur²、Q. Liu²、R. Sreenivasan¹、J. Cai¹、A. Kimball¹、S. Mehta¹、S. Luning³、Y. Zhu¹、Z. Zhu¹、T. Yamamoto⁴、A. Bryant¹、C. H. Lin¹、S. Naczas¹、H. Jagannathan¹、L. F. Edge¹、S. Allegret-Maret²、A. Dube¹、S. Kanakasabapathy¹、S. Schmitz¹、A. Inada⁴、S. Seo¹、M. Raymond³、Z. Zhang¹、A. Yagishita⁵、J. Demarest¹、J. Li¹、M. Hopstaken¹、N. Berliner¹、A. Upham¹、R. Johnson¹、S. Holmes¹、T. Standaert¹、M. Smalley¹、N. Zamdmer¹、Z. Ren¹、T. Nagumo⁴、 T. Wu, H. Bu, V. Paruchuri, D. Sadana, V. Narayanan, W. Haensch, J. O'Neill, T. Hook, M. Khare, G. Shahidi, B. Doris¹ (1.IBM、2.STMicroelectronics、3.GLOBALFOUNDRIES、4.Renesas、5.Toshiba , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-2] Carrier Transport Mechanisms in Schottky Barrier Source/Drain Nanowire FETs with Lateral Silicidation Process

T. Ishikawa¹、M. Saitoh¹、K. Ota¹、C. Tanaka¹、T. Numata¹ (1.Toshiba Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-7-3] Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

W. Feng^1,2、R. Hettiarachchi^1,2、S. Sato³、K. Kakushima³、M. Niwa^1,2、H. Iwai³、K. Yamada^1,2、K. Ohmori^1,2 (1.Univ. of Tsukuba、2.CREST-JST、3.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-1] A Consistent Modeling Framework to Explain Negative Bias Temperature Instability (NBTI) DC Stress, Recovery and AC Experiments

S. Mahapatra¹、A. E. Islam²、S. Deora¹、V. D. Maheta¹、M. A. Alam² (1.IIT Bombay , India、2.Purdue Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-2] HCI and NBTI Induced statistical Variability in CMOS Transistors

A. Cathignol¹、F. Cacho²、X. Federspiel²、D. Roy² (1.IBM、2.STMicroelectronics , France)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-3] Compact Reaction-Diffusion Model for Accurate NBTI Prediction

C. Ma^1,3、M. Miyake¹、H. J. Mattausch¹、K. Matsuzawa²、T. Iizuka²、T. Hozhida²、A. Kinoshita²、T. Arakawa²、J. He³、M. Miura-Mattausch¹ (1.Hiroshima Univ.、2.STARC , Japan、3.Peking Univ. , China)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-4] Enhanced Degradation by NBT stress in Si Nanowire Transistor

K. Ota¹、M. Saitoh¹、C. Tanaka¹、Y. Nakabayashi¹、K. Uchida²、T. Numata¹ (1.Toshiba Corp.、2.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-1] Investigation of the Electrical Properties of Ge/High-k Gate Stack: GeO₂ VS Si-cap

J. Mitard¹、F. Bellenger¹、L. Witters¹、B. De Jaeger¹、B. Vincent¹、L. Nyns¹、K. Martens¹、E. Vrancken¹、G. Wang¹、D. Lin¹、R. Loo¹、M. Caymax¹、K. De Meyer¹、M. Heyns¹、N. Horiguchi¹ (1.IMEC , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード