[P-5-14] An Experimental Verification of the Design Margin Analysis Method for Even-Stage Ring Oscillators with CMOS Latch

Y. Hirakawa¹、N. Mimura¹、A. Motomura¹、K. Nakamura¹ (1.Kyushu Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-5-15] Analysis of Cascode Structure for 60GHz Amplifier Design in 65nm CMOS

Q. Bu¹、N. Li¹、H. Asada¹、K. Okada¹、A. Matsuzawa¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-5-16] MOS Power Cells for Output Power Levels of 17 to 23 dBm

R. L. Wang¹、C. H. Liu²、C. C. Chuang²、C. H. Tu³、Y. Z. Juang³、Y. K. Su² (1.National Kaohsiung Normal Univ.、2.National Cheng Kung Univ.、3.National Chip Implementation Center , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-5-17] Power Amplifier for E-band Wireless Link Using 0.1μm GaAs pHEMT

M. Kang¹、B. Kim¹、K. Kim¹、W. Byun¹ (1.ETRI , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-1] Hot Carrier Effect on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs

E. Y. Jeong¹、H. C. Sagong¹、D. Y. Choi¹、C. W. Sohn¹、J. S. Lee¹、C. Y. Kang²、Y. H. Jeong¹ (1.POSTECH , Korea、2.SEMATECH , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-2] Effect of Etch Damage on Device performance in Trench-gate and Mesa-gate GaN Vertical MOSFET

K. W. Kim¹、S. D. Jung¹、M. K. Kwon¹、R. H. Kim¹、D. S. Kim¹、K. S. Im¹、H. S. Kang¹、C. H. Won¹、K. I. Jang¹、J. H. Lee¹、K. S. Kim² (1.Kyungpook National Univ.、2.Samsung LED , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-3] Electrical and Photo-response Properties of Titanium Contacts on n-type N-face and Ga-face GaN Layer for Vertical Power Devices Prepared by ELOG and Laser Lift-off

D. K. Kim¹、C. J. Lee¹、Y. J. Kwon¹、J. Y. Yun¹、D. S. Kim¹、H. B. Lee²、J. H. Lee¹、S. H. Hahm¹ (1.Kyungbook National Univ.、2.Samsung LED , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-4] Plasma-Induced Damage of GaN and Its Recovery by Atomic Hydrogens at a Room Temperature

Y. Lu¹、S. Chen¹、R. Kometani¹、K. Takeda¹、H. Kondo¹、T. Egawa²、K. Ishikawa¹、H. Amano¹、M. Sekine¹、M. Hori¹ (1.Nagoya Univ.、2.Nagoya Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-5] Temperature Dependent Characteristics of Fe/n-GaN Schottky Diodes

R. Adari¹、B. Sarkar¹、T. Patil¹、D. Banerjee^1,2、P. Suggisetti¹、S. Ganguly¹、D. Saha¹ (1.Center of Excellence in Nanodectronics、2.IITB-Monash Research Academy, CSE Building, IIT Bombay , India)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-6] Air-Gap Capacitance-Voltage Analyses of InP Surfaces after Wet and Dry Processes

T. Yoshida¹ (1.Shimane Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

741件中(551 - 560)

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