[F-4-2] Practical Consideration of Endurance and Performance for sub-90 nm Embedded 2T-FN Flash Memory beyond Smart Card IC

Y. K. Lee¹、B. Seo¹、J. Park¹、C. Jeon¹、Y. Jeong¹、S. B. Ryu¹、H. Yoo¹、Y. Kim¹、J. U. Han¹、E. Jung¹ (1.Samsung Electronics Co., Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-4-3] Direct Comparison of Electrical Charaeteristics for Double-Gate and Tri-Gate Flash Memories

Y. X. Liu¹、T. Kamei²、T. Matsukawa¹、K. Endo¹、S. O'uchi¹、J. Tsukada¹、H. Yamauchi¹、Y. Ishikawa¹、T. Hayashida²、K. Sakamoto¹、A. Ogura²、M. Masahara^1,2 (1.AIST、2.Meiji Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-1] A Novel Operating Scheme for 2-bit/Cell Split Gate SONOS Flash Memory

C. H. Chou¹、S. S. Chung¹、C. H. Lee²、T. M. Hsieh²、J. C. Liou²、C. H. Chen³、P. ZP. Chen³、H. H. Chen³ (1.National Chiao Tung Univ.、2.Solid State System、3.UMC , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-2] Re-examination of Performance and Reliability Degradation in MONOS Memory with Ultra-thin (~2nm) SiN Charge Trap Layers

H. Kusai¹、M. Morota¹、M. Oda¹、S. Fujii¹、K. Sakuma¹、M. Koyama¹ (1.Toshiba Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-5-3] Robust Data Retention and Superior Endurance SONOS Nonvolatile Memory with NH₃ Plasma Treated and Pd NCs Embedded Charge Storage Layer

S. H. Liu¹、W. L. Yang¹、S. T. Chen¹、M. R. Ye¹、T. S. Chao² (1.Feng Chia Univ.、2.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-1] Entropy-controlled Phase-change Memory

J. Tominaga¹、P. Fons¹、A. Kolobov¹、R. Simpson¹、X. Wang¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-2] Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn¹、B. Lee¹、R. G. D. Jeyasingh¹、M. Asheghi¹、G. A. M. Hurkx²、K. E. Goodson¹、H. S. P. Wong¹ (1.Stanford Univ. , USA、2.NXP-TSMC Research Center , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-3] Effect of Interfacial oxide layer on Switching Uniformity of Ge₂Sb₂Te₅ Based Resistive Switching Memory Device

J. Woo¹、S. Jung¹、S. M. Sadaf¹、E. Cha¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-4] Improvement in resistive switching parameters by selecting the SET polarity in IrO_x/TaO_x/WO_x/W structure

A. Prakash¹、S. Maikap¹、C. S. Lai¹、H. Y. Lee²、W. S. Chen²、F. T. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.ITRI , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-5] Reset Current Reduction with Excellent Filament Controllability by using Area Minimized and Field Enhanced Unipolar RRAM structure

K. C. Ryoo^1,2、S. H. Park¹、J. H. Oh^1,2、S. Jung¹、H. Jeong²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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