[P-13-2] Analysis of Bottom Channel Effect in Silicon Nanowire FET based on Bulk-Silicon: Reduction of Parasitic Capacitance caused by SiGe layer
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
741件中(691 - 700)
[P-13-3] A Multi Switching Current Study of Single-Electron Transistors Using Side Gate Bias Effect
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-4] Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-5] Formation of ohmic contact of InP nanowires without annealing processes
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-6] Suppression of surface nanocrystal nucleation in growth of GaAs nanowire on Si(111) by molecular beam epitaxy
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-7] Thermoelectric power of catalyst-free GaAs nanowires grown by MBE-VLS method
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-8] Effect of the Drain Configuration on the Current-Voltage Characteristics of Vertical Nanowire Field Effect Transistors
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-9] Graphene Gated SiO2 Core-shell Silicon Nanowire Transistors
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-10] Tunable Magnetic Properties of Rhombohedral Graphite Thin Films
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-13-11] Precise control of layer number in graphene grown on Ni(111)
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード