[C-1-2] Fabrication of Graphene Directly on SiO₂ without Transfer Processes by Annealing Sputtered Amorphous Carbon

M. Sato¹、M. Inukai²、E. Ikenaga²、T. Muro²、S. Ogawa³、Y. Takakuwa³、H. Nakano¹、A. Kawabata¹、M. Nihei¹、N. Yokoyama¹ (1.AIST/GNC、2.JASRI/SPring-8、3.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Initial Growth Observation of Multilayer Graphene on SiO₂/Si substrates Using Raman Spectroscopy and XPS

Y. Ojiro¹、S. Ogawa¹、M. Inukai²、M. Sato^1,3、E. Ikenaga²、T. Muro²、M. Nihei³、Y. Takakuwa¹、N. Yokoyama³ (1.Tohoku Univ.、2.JASRI/SPring-8、3.AIST/GNC , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-4] STC: Single-Tube Characterization Methodology for Experimental and Analytical Evaluation of Carbon Nanotube Synthesis

H. Y. Chen¹、A. Lin¹、L. S. Liyanage¹、C. Beasley¹、N. Patil¹、H. Wei¹、S. Mitra¹、H. S. P. Wong¹ (1.Stanford Univ. , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-5L] Effect of H₂ gas addition on Si Oxidation Process with Ar and O₂ Mixture Surface Wave Plasma

K. Takeda¹、M. Hori¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-1] Improvement of thermal stability in High Density Ta₂O₅ 3D capacitor by additional thin SiO₂ layer

M. Detalle¹、H. Dekkers¹、G. Potoms¹、A. Phommahaxay¹、D. S. Tezcan¹、P. Soussan¹、G. Beyer¹ (1.IMEC , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-2] Pico-Ampere Switching ReRAM with Vertically Contacted 5 nm-diameter Carbon Nanotube Electrodes for BEOL-Based Memory

H. Nakano¹、M. Takahashi¹、T. Murakami¹、A. Kawabata¹、M. Sato¹、M. Nihei¹、N. Yokoyama¹ (1.GNC, AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-3] Performance Evaluation of a Logic-IP Compatible (LIC) Embedded DRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers

I. Kume¹、N. Inoue¹、K. Hijioka¹、J. Kawahara¹、K. Takeda¹、N. Furutake¹、H. Shirai¹、K. Kazama¹、S. Kuwabara¹、M. Watarai¹、T. Sakoh¹、T. Takahashi¹、T. Ogura¹、T. Taiji¹、Y. Kasama¹、M. Sakamoto¹、M. Hane¹、Y. Hayashi¹ (1.Renesas Electronics Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-1] 1X nm Copper and Low-k reliability

Z. Tökei¹、K. Croes¹ (1.IMEC , Belgium)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-2] Characterization of Patterned SiOC film by STEM-VEELS at Lower (80kV) Acceralation Energy

Y. Otsuka¹、Y. Shimizu¹、T. Naijou¹、S. Ogawa² (1.Toray Research Center Inc.、2.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-3] Nano-scale Boron Mapping in Silicon Devices Using C_s-corrected STEM-EELS

N. Nakanishi¹、H. Arie¹、Y. Kunimune¹、T. Ide¹、Y. Hirose¹、N. Hattori¹、T. Koyama¹ (1.Renesas Electronics Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード