[P-9-12] Electron emission properties of GaAsN/GaAs quantum well containing N-related localized states: the influence of illuminance

M. C. Hsieh¹、J. F. Wang¹、K. H. Tseng¹、C. H. Chao¹、Y. C. Chi¹、R. C. C. Chen¹、C. H. Yang¹、Y. S. Wang¹、C. H. Chiang¹、J. F. Chen¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-13] Electrical Characteristics and TDDB Reliability of ZrO₂/Al₂O₃/ZrO₂ Stack High-k Gate Dielectric

C. L. Lin¹、S. C. Wu¹、C. C. Tang¹、M. Y. Li² (1.Feng Chia Univ.、2.ProMOS Tech. Inc. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-14] Retention characteristics of resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures

M. Watanabe¹、K. Uryu¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-15] Two Terminal Switching Device for Spin Transfer Torque (STT) MRAM

G. H. Kil¹、H. J. Yang¹、S. H. Lee¹、Y. H. Song¹ (1.Hanyang Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-16] P-type Tunneling Transistors with Poly-Si by Sequential Lateral Solidification (SLS) Growth Technique

M. H. Lee¹、T. H. Wu¹、S. C. Weng¹ (1.National Taiwan Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-17] In-situ TEM Observation for Formation of Au Nanowires and Nanogaps caused by Electromigration

Y. Murakami¹、M. Arita¹、K. Hamada¹、Y. Takahashi¹ (1.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-18] Optical selection rules for graphene nanoribbons

K. Sasaki¹、K. Kato¹、Y. Tokura¹、T. Sogawa¹ (1.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-19] Tunnel Spin Injection into Graphene Using Al₂O₃/PTCA Barrier Grown by Atomic Layer Deposition

T. Yamaguchi¹、S. Masubuchi¹、K. Iguchi¹、R. Moriya¹、T. Machida^1,2 (1.Univ. of Tokyo、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-9-20L] Si-Nanowire-Based Memristors Constructed Using Top-Down Methods for Flexible Electronic Systems

T. Moon¹、J. Kang¹、Y. Han¹、C. Kim²、Y. Jeon¹、H. Kim¹、S. Kim¹ (1.Korea Univ. , Korea、2.Lawrence Berkeley National Laboratory , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-10-1] Formation of Organic Nanodots Using Diamine Derivative and Self-Assembled Monolayer

T. Morimoto¹、S.G. Park¹、T. Inden¹、T. Nishikawa²、T. Mori¹ (1.Nagoya Univ.、2.Iwate Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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