[A-1-1] InAlN/GaN HEMTs: Recent Progress and Challenges for the Future

J. Kuzmík^1,2 (1.Slovak Academy of Sciences , Slovakia、2.TU Vienna , Austria)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-2] High-Power and High-Gain S-band AlGaN/GaN HFETs with Source Field Plates on Si Substrate

S. Nakazawa¹、N. Tsurumi¹、M. Nishijima¹、Y. Anda¹、M. Ishida¹、T. Ueda¹、T. Tanaka¹ (1.Panasonic Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-3] RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond

K. Hirama¹、M. Kasu¹、Y. Taniyasu¹ (1.NTT Corp. NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-4] Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

A. Imai¹、K. Yamanaka²、Y. Suzuki¹、T. Nanjo¹、M. Suita¹、K. Shiozawa¹、Y. Abe¹、E. Yagyu¹、A. Shima¹ (1.Advanced Tech. R&D Center, Mitsubishi Electric Corp.、2.Information Tech. R&D Center, Mitsubishi Electric Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-5] Temperature Dependence and Current Collapse of AlGaN/GaN Super Heterojunction Field Effect Transistor

S. Yagi¹、S. Hirata¹、Y. Sumida¹、A. Nakajima²、H. Kawai¹、E. M. Sankara Narayanan² (1.POWDEC. K. K. , Japan、2.Univ. Sheffeld , UK)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-6] Sputtered amorphous AlN gate dielectric for AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor

H. A. Shih¹、M. Kudo¹、M. Akabori¹、T. Suzuki¹ (1.JAIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-1] Extending the Bandwidth and Functionality of High Performance InP HBT Technologies

M. Urteaga¹、R. Pierson¹、J. Bergman¹、D. H. Kim¹、P. Rowell¹、B. Brar¹、M. Rodwell² (1.Teledyne Scientific Company、2.Univ. of California, Santa Barbara , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-2] Low-turn-on voltage heterojunction bipolar transistors with a C-doped In_xGa_1-xAs_1-ySb_y base grown by metalorganic chemical vapor deposition

T. Hoshi¹、H. Sugiyama¹、H. Yokoyama¹、K. Kurishima¹、M. Ida¹ (1.NTT Photonics Labs, NTT Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] Effects of Plasma-PH₃ passivation on Mobility Degradation Mechanisms and Current Conduction Mechanisms of In_0.53Ga_0.47As N-MOSFET

A. B. S. Sumarlina^1,2、H. J. Oh¹、A. Du²、S. J. Lee¹ (1.National Univ. of Singapore、2.GLOBALFOUNDRIES Singapore Pte.Ltd. , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-4] In_0.53Ga_0.47As Channel N-MOSFETs with Shallow Metallic S/D Extension

Z. Zhu¹、X. Gong¹、 Ivana¹、Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード