[P-4-10] Multi-Level Phase-Change Memory Cells with SiN or Ta2O5 Barrier Layers
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
741件中(531 - 540)
[P-4-11] Endurance enhancement of elevated-confined phase change random access memory
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-4-12] Simulation of Retention Behavior for the Phase Change Memory
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-4-13L] Filament Formation by Cu and Ag Ions for Memory Applications Utilizaing Oxide Dielectrics With Pre-existing Vacated O-atom Sites
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-4-14L] Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2 based Resistive Switching Memory and its Mechanism for MLC Operation
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-4-15L] Design and Optimization of Program and Restore Operations in CMOS-Compatible Nonvolatile Latch
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-4-16L] SET polarity dependent resistive switching memory characteristics using IrOx/GdOx/WOx/W structure
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-5-1] Wireless Charge Based Capacitance Measurement Circuits with On-chip Spiral Inductor for RFID Biosensor
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-5-2] SPICE MOSFET Analog Model Parameter Verification and Re-optimization Based on gm/ID Lookup Table Design Methodology
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[P-5-3] Write Speed Evaluation of Reconfigurable Spin Logic Block with SPRAM for 3D-Stacked Reconfigurable Spin Processor
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード