[E-1-2] 1.2 nm-EOT Al₂O₃/Ge Gate Stack with GeO_x-free Interface

T. Tabata^1,2、C. H. Lee^1,2、T. Nishimura^1,2、S. K. Wang^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-3] Effective Passivation of Interface Dipole in TiN-Gate Ge-MOS Capacitor with Ultrathin SiO₂/GeO₂ Bilayer by Nitrogen Incorporation

K. Sakamoto¹、Y. Iwamura¹、K. Yamamoto¹、H. Yang¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-4] Defect Control in Germanium Oxide Film Thermally Grown on Germanium Substrate

Y. Oniki¹、T. Ueno¹ (1.Tokyo Univ. of Agri. and Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-1-5] High-Electron-Mobility Ge n-MOSFET with TiN Metal Gate

T. Yamanaka¹、K. Yamamoto¹、K. Sakamoto¹、H. Yang¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-1] In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks

G. Reimbold¹、M. Cassé¹、X. Garros¹、C. Leroux¹、M. Charbonnier¹、L. Brunet^2,1、S. Baudot^2,1、P. Caubet²、C. Fenouillet-Béranger^1,2、F. Andrieu¹、O. Weber¹、P. Perreau^1,2、F. Martin¹ (1.CEA-LETI/MINATEC、2.STMicroelectronics , France)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-2] Role of Al atoms in (TaC)_1-xAl_x gate electrode on V_fb for HfO₂ gate stack

M. Kimura¹、T. Nabatame²、H. Yamada¹、A. Ohi²、T. Chikyow²、T. Ohishi¹ (1.Shibaura Inst. of Tech.、2.NIMS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-3] Impurity Profile Extraction of Semiconductor Devices from STM Tunneling Currents by Current Continuity Based Simulation

K. Fukuda¹、M. Nishizawa¹、T. Tada¹、L. Bolotov²、K. Suzuki³、S. Sato³、H. Arimoto¹、T. Kanayama¹ (1.AIST、2.Univ. of Tsukuba、3.Fujitsu Semiconductor Ltd. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-2-4] Influence of channel area scaling on Weibull distribution of TDDB for poly-Si channel FET

I. Hirano¹、M. Saito¹、T. Numata¹、Y. Mitani¹ (1.Toshiba Corp. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-1] Soft X-ray Photoelectron Spectroscopy on Chemical Bonding States of Boron Doped in Si Fin Structures

Y. Miyata¹、J. Kanehara¹、H. Nohira²、Y. Izumi³、T. Muro³、T. Kinoshita³、P. Ahmet¹、K. Kakushima¹、K. Tsutsui¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech、2.Tokyo City Univ.、3.JASRI/SPring-8 , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO₂/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy

K. Kakushima¹、J. Kanehara¹、Y. Izumi²、T. Muro²、T. Kinoshita²、P. Ahmet¹、K. Tsutsui¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech、2.JASRI/SPring-8 , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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