[M-3-4] Characteristics of Nitrogen δ-doped AlGaAs/GaAs Quantum Wells grown by Molecular Beam Epitaxy
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
741件中(431 - 440)
[M-8-1] Impact on TFT Characteristics of Rapid Crystallization of Si using Nickel-Metal Induced Lateral Crystallization
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-8-2] High Speed Lateral Crystallization of Amorphous Silicon Films on Glass Substrates by Micro-Thermal-Plasma-Jet Irradiation and Its Application to Thin Film Transistor Fabrication
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-8-3] Investigation of Ni Metal Induced Lateral Crystallization with a-Si Film Thickness at Very Thin Extent
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-8-4] Orientation Control of Al-Induced Crystallized Silicon by Diffusion Barrier Layers
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-8-5] Phosphorus Mediated Growth of Ge Layer on Si(001) Substrate
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-8-6] Precise thickness and strain control during epitaxial growth of strained Ge/SiGe multilayers by industrial class CVD
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-8-7] Boron and Carbon co-doping in high percentage Silicon-Germanium Alloys - Effects of Dopant Incorporation, Strain Compensation and Microstructure -
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-9-1] Probing Transverse-Optical Phonons in Strained Si Nanowire: Strain Profiles and Nanomechanical properties
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード
[M-9-2] Leakage Current Control of Fluoride Ultra-thin Films Grown on Ge Substrates
2011 International Conference on Solid State Devices and Materials |PDF ダウンロード