741件中(351 - 360)

[K-2-1] Resistance distribution of CNT network measured by conductive atomic force microscopy

K. Housayama¹、Y. Okigawa¹、S. Kishimoto¹、Y. Ohno¹、T. Mizutani¹ (1.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-2] Theoretical Study of AC Response of Defective Carbon Nanotubes:Tube Diameter Dependence

D. Hirai¹、T. Yamamoto^1,2、S. Watanabe¹ (1.Univ. of Tokyo、2.Tokyo Univ. of Sci. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-3] Argon Ion Bombardment to Improve Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor

X. Yi¹、G. Nakagawa¹、H. Ozawa¹、T. Fujigaya¹、N. Nakashima¹、T. Asano¹ (1.Kyushu Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-4] Optimization of Source/Drain Doping Concentration of Carbon Nanotube FETs to Suppress Off-state Leakage Current while Keeping Ideal On-state Current

B. P. Algul¹、K. Uchida¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-5] Spin-Related Novel Optical Phenomena in Single-Walled Carbon Nanotubes

S. Konabe^1,2、S. Okada^1,2 (1.Univ. of Tsukuba、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-2-6] Carbon Nanotube Photonics: Light emission in silicon and optical gain

N. Izard¹、E. Gaufrès^1,2、A. Beck¹、A. Noury¹、X. L. Roux¹、L. Vivien¹ (1.Univ. Paris Sud , France、2.Univ. Montrèal , Canada)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-1] Electron mobility calculations of free-standing Si-nanowires with atomistic electron-phonon interactions

Y. Yamada¹、H. Tsuchiya¹、M. Ogawa¹ (1.Kobe Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-2] Charge transfer by multiple donors in a Si nanowire

G. P. Lansbergen¹、Y. Ono¹、A. Fujiwara¹ (1.NTT Basic Res. Lab. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-3] High-performance Carbon Nanotube Thin-film Transistors with >600 cm²V^-1s^-1 Mobility and >10⁷ On/off Ratio

D. M. Sun¹、M. Y. Timmermans²、Y. Tian²、A. G. Nasibulin²、S. Kishimoto¹、T. Mizutani¹、E. I. Kauppinen²、Y. Ohno¹ (1.Nagoya Univ. , Japan、2.Aalto Univ. , Finl)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[K-3-4] Ambipolar Conversion of Polymer-Coated All Single-Walled Carbon Nanotube Field-Effect Transistors

S. Aikawa^1,2、E. Einarsson¹、S. Chiashi¹、E. Nishikawa²、S. Maruyama¹ (1.Univ. of Tokyo、2.Tokyo Univ. of Sci. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

741件中(351 - 360)