[A-4-1] GaAsSb/InGaAs Vertical Tunnel FET with a 25 nm-wide Channel Mesa Structure

M. Fujimatsu¹、H. Saito¹、Y. Miyamoto¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] Pnp AlGaN/InGaN Heterojunction Bipolar Light-Emitting Transistors with a Quantum Well in the Base

K. Kumakura¹、T. Makimoto¹、H. Yamamoto¹ (1.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes Using Low-Melting Point Alloy Bumps

J. Nakano¹、T. Shibata¹、T. Okatsu¹、M. Mori¹、K. Maezawa¹ (1.Univ. of Toyama , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-4] Operating Principle and Integration of In-Plane Gate Logic Devices

Y. Komatsuzaki¹、K. Saba¹、K. Onomitsu²、H. Yamaguchi²、Y. Horikoshi¹ (1.Waseda Univ.、2.NTT BRL , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] Zinc Oxide Thin-Film Transistors on Flexible Plastic Substrates and Glass Substrates Fabricated at Room Temperature

T. Higaki¹、Y. Kimura¹、T. Maemoto¹、S. Sasa¹、M. Inoue¹ (1.Osaka Inst. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-2] Low Temperature Processed Zinc Oxide Thin Film Transistors by Plasma Assisted Atomic Layer Deposition

Y. Kawamura¹、M. Tani¹、N. Hattori²、N. Miyatake²、M. Horita¹、Y. Ishikawa¹、Y. Uraoka^1,3 (1.NAIST、2.Mitsui Eng. and Shipbuilding Co., Ltd.、3.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-3] Effects of Excimer Laser annealing of Oxide Semiconductor Films

M. Fujii¹、R. Ishihara²、T. Chen²、J. Van der Cingel²、M. R. T. Mofrad²、M. Kasami³、K. Yano³、M. Horita^1,4、Y. Ishikawa^1,4、Y. Uraoka^1,4 (1.NAIST , Japan、2.Delft University of Technology , The Netherlands、3.Idemitsu Kosan Co., Ltd.、4.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] High Mobility Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with a Strong Reduction Capping Layer

H. W. Zan¹、C. C. Yeh²、C. C. Tsai¹、H. F. Meng¹ (1.National Chiao Tung Univ.、2.E Ink Holdings Inc. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-5] The Influence of a SnInGaZnO Electron Barrier Layer on the performance of Low-Driving Voltage InGaZnO Thin-Film Transistors

H. Y. Huang¹、S. J. Wang¹、C. H. Wu²、C. K. Chiang¹、Y. C. Huang¹、J. Y. Su¹ (1.National Cheng Kung Univ.、2.Chung Hua Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] High Integrity SiO₂ Gate Insulator Formed by Microwave-Excited PECVD for AlGaN/GaN Hybrid MOS-HFET on Si Substrate

H. Kambayashi^1,3、T. Nomura¹、S. Kato¹、H. Ueda²、A. Teramoto³、S. Sugawa³、T. Ohmi³ (1.Advanced Power Device Res. Association、2.Tokyo Electron Tech. Development Inst. Inc.、3.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

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