[L-9-1] CO₂ conversion with light and water by GaN photo-electrode

S. Yotsuhashi¹、M. Deguchi¹、Y. Zenitani¹、R. Hinogami¹、H. Hashiba¹、Y. Yamada¹、K. Ohkawa² (1.Panasonic Corp.、2.Tokyo Univ. of Sci. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-9-2] Local Characterization of Multicrystalline Silicon Solar Cells through Photothermal and Potential Measurements by Scanning Probe Microscopy

K. Hara¹、T. Takahashi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-9-3] Impact of light element impurities on crystalline defect generation in silicon substrate

T. Tachibana¹、T. Sameshima¹、T. Kojima²、K. Arafune³、K. Kakimoto⁴、Y. Miyamura⁵、H. Harada⁵、T. Sekiguchi⁵、Y. Ohshita²、A. Ogura¹ (1.Meiji Univ.、2.Toyota Tech. Inst.、3.Univ. of Hyogo、4.Kyusyu Univ.、5.NIMS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-9-4] Flash-Lamp-Induced Explosive Crystallization of Amorphous Films Leaving Behind Periodic Microstructures

K. Ohdaira^1,2、H. Matsumura¹ (1.JAIST、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[L-9-5] Preparation of a Diameter-controlled Silicon Nanowire Array by Metal Assisted Chemical Etching using Silica Nanoparticles (MACES)

S. Kato¹、Y. Watanabe¹、Y. Kurokawa¹、A. Yamada¹、Y. Ohta²、Y. Niwa²、M. Hirota² (1.Tokyo Tech、2.Nissan Res. Center , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-1-1] Progress in Nonpolar and Semipolar GaN-base Materials and Devices

J. S. Speck¹ (1.Univ. of California, Santa Barbara , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-1-2] Tilted domain and indium content of MOVPE-grown InGaN layer on m-plane GaN substrate

K. Shojiki¹、T. Hanada^1,2、T. Shimada¹、Y. Liu^1,2、R. Katayama^1,2、T. Matsuoka^1,2 (1.Tohoku Univ.、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-1-3] Effect of Phase Purity on Dislocation Density of PR-MOVPE-Grown InN

T. Iwabuchi¹、Y. Liu^1,2、T. Kimura^1,2、Y. Zhang^1,2、K. Prasertsuk¹、R. Katayama^1,2、T. Matsuoka^1,2 (1.Tohoku Univ.、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-1-4] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE

T. Akasaka¹、Y. Kobayashi¹、M. Kasu¹ (1.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[M-1-5] Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC (000-1) Substrate by Molecular-Beam Epitaxy

H. Okumura¹、T. Kimoto¹、J. Suda¹ (1.Kyoto Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

741件中(411 - 420)

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