[P1-7] A Novel Explanation of Substrate Bias Dependent Dielectric Breakdown Behavior with Channel Quantization Effect in Ultrathin Oxide pMOSFETs

Sinclair Chiang, J.W. You, C.T. Lu, M.F. Lu, S. Huang-Lu, S.C. Chien (1.Central Research and Development Division, UMC)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-8] lmproving high-k gate dielectrics properties by high pressure water vapor annealing

P. Punchaipetch, H. Nakamura, Y. Uraoka, T. Fuyuki, T. Sameshima, S. Horii (1.Nara Institute of Science and Technology, 2.Tokyo University of Agriculture and Technology, 3.Hitachi Kokusai Electric Inc.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-9] Reduction of Accumulation Thickness in Metal Gate

Hiroshi Watanabe, Kazuaki Nakajima, Kouji Matsuo, Tomohiro Saito, Takuya Kobayashi (1.Advanced LSI Technology Laboratory, Toshiba Corp., 2.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-10] Analysis of NiSi Fully-silicided Gate on SiO2 and HfO2 for CMOS Application

Chih Feng Huang, Bing Yue Tsui (1.Department of electronics Engineering, National Chiao-Tung University, 2.National Nano Device Laboratories)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-11] Composition control of Ni-silicide by CVD using Ni(PF3)4 and Si3H8

Masato Ishikawa, Ikuyo Muramoto, Hideaki Machida, Yoshio Ohsihita, Satoshi IMAI, Atsushi OGURA (1.Tri Chemical Laboratories Inc., 2.Toyota Technological Institute, 3.Meiji University)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-12] Work Function Adjustment by Nitrogen Incorporation in HfN Gate Electrode

Chao-Sung Lai, Shing-Kan Peng, Jer-Chyi Wang, Tung-Ming Pan, Kung-Ming Fan, Jian-Yi Wong (1.Department of Electronic Engineering, Chang Gung University, 2.Nanya Technology Corporation)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-13] Overcoming Challenges in Metal Gate Etching for Sub-45 nm Technology Node

V. N. Bliznetsov, R. Kumar, L. K. Bera, W. Y. Loh, C. H. Tung, N. Balasubramanian, D. L. Kwong (1.Institute of Microelectronics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-14] Germanium Out-Diffusion in HfO2 and its Impact on Electrical Properties

Qingchun Zhang, Nan Wu, Chunxiang Zhu, L.K. Bera (1.Silicon Nano Device Lab, Department of Electrical and Computer Engineering, 2.National University of Singapore, 3.Institute of Microelectronics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-15] Gate Stack Integration of Germanium Oxynitride for Germanium MOSFETs

Yu-Lin Chao, Roland Scholz, Jason C. S. Woo (1.Univ. of California, Los Angeles, Dept. of Electrical Engineering, School of Eng., 2.Max-Planck Institute of Microstructure Physics)

2005 International Conference on Solid State Devices and Materials |PDF Download

[P1-16] Atomistic Modeling of Boron Diffusion with Germanium Pre-amorphization for Ultra Shallow S/D Junction in nanometer-scale PMOS Devices

Byeong-Jun Kim, Jae-Hyun Yoo, Taeyoung Won (1.Department of Electrical Engineering, School of Engineering, Inha University National IT Research Center for Computational Electronics)

2005 International Conference on Solid State Devices and Materials |PDF Download