[P-1-16] New Concept of Plasma-induced Damage in MNOS FET during Thick Dielectric Film Etching Using Fluorocarbon Gas Plasma

Y. Ichihashi¹、Y. Ishikawa¹、S. Samukawa¹ (1.Tohoku Univ. , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-17] A Novel Hot DI Water Rinse on SOD Filled Self-Aligned Shallow Trench Isolation for Highly Reliable NAND Flash Memory

C. H. Liu¹、Y. M. Lin¹、R. T. Peng¹、H. C. Wei¹、H. J. Chien¹、Y. T. Chiu¹、L. T. Kuo¹、H. P. Hwang¹、M. S. Lee¹、S. Pittikoun¹ (1.Powerchip Semiconductor Corp. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-18] High-Performance Poly-Si TFTs with Novel FinFet-like Channel

Y. H. Lue¹、P. Y. Kuo¹、Y. H. Wu¹、T. S. Chao¹ (1.National Chiao Tung Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-19] Fluorescence XAFS analysis of thermal stability for Ru/HfSiON/SiON/Si gate stack structure

H. Ofuchi¹、H. Kamada²、S. Toyoda^2,3,4、H. Kumigashira^2,3,4、T. Sukegawa⁵、K. Iwamoto⁵、Z. Liu⁵、M. Oshima^2,3,4 (1.JASRI、2.Univ. of Tokyo、3.UT-SRRO、4.JST-CREST、5.STARC , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-20] Strain and stress tensor evaluation in global and local strained-Si by electron back scattering pattern

M. Tomita¹、D. Kosemura^1,2、M. Takei¹、K. Nagata¹、H. Akamatsu¹、A. Ogura¹ (1.Meiji Univ.、2.Research Fellow of the JSPS , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-21] Development of an STM simulator for quantitative dopant profiling

M. Nishizawa^1,2、L. Bolotov²、T. Tada^1,2、H. Fukutome²、H. Arimoto²、T. Kanayama^1,2 (1.MIRAI-AIST、2.NIRC-AIST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-22L] Many-electron charge transfer multiplet theory: O-atom vacancies in high-k dielectrics

G. Lucovsky¹、L. Miotti¹、K. Paz Bastos¹ (1.North Carolina State Univ , USA)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-23L] Momentum Transfer Implantation for Sidewall Doping of FinFET's

G. Fuse¹、M. Sugitani¹、H. Matsushita¹、H. Murooka¹、M. Kuriyama²、M. Tanaka² (1.SEN corporation、2.Sumitomo Heavy Industry , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-24L] MIM Capacitors with Stacked TiO₂/Y₂O₃ Insulator Featuring High Capacitance Density and Low Leakage Current

C. C. Lin¹、Y. C. Hu¹、L. L. Chen¹、M. L. Wu¹、J. R. Wu¹、Y. H. Wu¹ (1.National Tsing Hua Univ. , Taiwan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-25L] Fabrication of hp 25nm Si Pillar Using New Multiple Double Patterning Technique

M. Kushibiki^1,4、A. Hara^2,4、E. Nishimura^1,4、T. Endoh^3,4 (1.Tokyo Electron AT Ltd.、2.Tokyo Electron Ltd.、3.Tohoku Univ.、4.JST-CREST , Japan)

2010 International Conference on Solid State Devices and Materials |PDF ダウンロード