[K-5-3] Using Sub-microsecond Measurement to Monitor AC NBTI and Dividing Trap Types into N_IT, N_HT and N_FT through Adjustable Stress Frequency and Measure Frequency

^○C. H. Chiang¹, N. Ke¹, S. N. Kuo¹, A. Juan¹, K. C. Su¹ (1.United Microelectronics Corp.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Tue. Sep 29, 2015 6:05 PM - 6:25 PM |PDF Download

[K-6-1] Modeling of Nonlinear Thermal Resistance in FinFET

B. K. Kompala¹, P. Kushwaha¹, S. Khandelwal², J. P. Duarte², A. S. Medury², C. Hu², ^○Y. S. Chauhan¹ (1.Indian Institute of Technology Kanpur, 2.University of California, Berkeley(India))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:00 AM - 9:20 AM |PDF Download

[K-6-2] Ballistic and Quasi-ballistic Hole Transport Properties in Germanium Nanowire pMOSFETs Based on an Extended "Top of the Barrier" Model

^○H. Tanaka¹, J. Suda¹, T. Kimoto¹ (1.Kyoto Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:20 AM - 9:40 AM |PDF Download

[K-6-3] Experimental Study on Interface Region of Two-Dimensional Si Layers

^○T. Mizuno¹, Y. Suzuki¹, R. Kikuchi¹, A. Suzuki¹, M. Yamanaka¹, Y. Nagamine¹, T. Aoki¹, T. Maeda² (1.Kanagawa Univ., 2.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 9:40 AM - 10:00 AM |PDF Download

[K-7-1] Reliability of Improved CAAC-IGZO FET Satisfying NOSRAM Performance

^○T. Murakawa¹, K. Ohshima¹, M. Tsubuku¹, D. Shimada¹, N. Kamata¹, T. Tanaka¹, A. Shimomura¹, M. Sakakura¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co. Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 10:45 AM - 11:05 AM |PDF Download

[K-7-2] Degradation Investigation of High-k/Metal Gate nMOSFETs by 3D KMC with Multiple Traps Interactions

^○Y. Li¹, H. Jiang¹, Z. Y. Lun¹, Y. J. Wang¹, P. Huang¹, H. Hao¹, G. Du¹, X. Zhang¹, X. Y. Liu¹ (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:05 AM - 11:25 AM |PDF Download

[K-7-3] Estimation of Soft Error Tolerance According to the Thickness of Buried Oxide and Body Bias 28-nm and 65-nm in FD-SOI Processes by a Monte-Carlo Simulation

^○K. Zhang¹, J. Yamaguchi¹, S. Kanda¹, J. Furuta¹, K. Kobayashi¹ (1.Kyoto Inst. of Tech.(Japan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:25 AM - 11:45 AM |PDF Download

[K-7-4] Impact of Hole Shape on Program Vt Distribution in Gate-All-Around 3D Flash Memory

^○C. H. Cheng¹, C. W. Lee¹, K. W. Wu¹, S. H. Ku¹, N. K. Zous¹, L. Liu¹, S. W. Huang¹, Y. W. Chang¹, I. J. Huang¹, A. Suzuki¹, T. C. Lu¹, W. P. Lu¹, ChenK. C. ¹ (1.Macronix Int'l. Co., Ltd.(Taiwan))

2015 International Conference on Solid State Devices and Materials |Wed. Sep 30, 2015 11:45 AM - 12:05 PM |PDF Download

[M-1-1] (Invited) InGaAs Channel for Low Supply Voltage

^○Y. Miyamoto, T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, M. Fujimatsu, K. Ohashi, S. Nestu, S. Iwata (1.Tokyo Tech(Japan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:00 PM - 2:30 PM |PDF Download

[M-1-2] Evaluation of InAs HEMT with Non-alloyed Ohmic Contacts & Mesa Sidewall Etch for RF and Low-Power Logic Applications

K. C. Yang¹, ^○J. N. Yao¹, H. H. Hsu¹, Y. C. Lin¹, H. T. Hsu², J. S. Maa¹, E. Y. Chang¹, H. Iwai³ (1.National Chiao Tung Univ., 2.Yuan Ze Univ., 3.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |Mon. Sep 28, 2015 2:30 PM - 2:45 PM |PDF Download