Oral presentation

[20a-438-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 438 (3F_Lounge)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

△ [20a-438-1] Generation and analysis of ZnO nanoparticles using sputtering and laser

〇Wataru Wakaki¹, Akio Sanpei¹, Noriyuki Hasuike¹, Susumu Kamoi², Kenji Kisoda³ (1.Kyoto Ins. of Tech., 2.Kyoto Tech. Center, 3.Wakayama Univ.)

9:15 AM - 9:30 AM

[20a-438-2] Dependence of the plasma and substrate distances on the sputtering growth of GaN

〇Atsushi Tanide^1,3, Motohiro Kohno^1,3, Shigeru Takatsuji¹, Akira Horikoshi^1,3, Shohei Nakamura¹, Kazuo Kinose¹, Soichi Nadahara¹, Masazumi Nishikawa², Akinori Ebe², Kenji Ishikawa³, Masaru Hori³ (1.SCREEN Holdings, 2.EMD Corp., 3.Nagoya Univ.)

9:30 AM - 9:45 AM

[20a-438-3] ITO thin films fabricated by hybrid facing cathode sputtering using rf-dc coupled power supply

〇Shinichi Morohashi¹ (1.Yamaguchi Univ.)

9:45 AM - 10:00 AM

△ [20a-438-4] Sputter Epitaxy of In-rich (ZnO)_x(InN)_1-x Films Directly on Sapphire Substrates

〇Nanoka Miyahara¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Daisuke Nakamura¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

10:00 AM - 10:15 AM

△ [20a-438-5] Production process of ions in high power pulse sputtering discharge using titanium target

〇(M2)Kazunori Iga¹, Takayuki Ohta¹ (1.Meijo Univ.)

10:15 AM - 10:30 AM

△ [20a-438-6] Tribological properties of Si-doped DLC film deposited by dual magnetron sputtering

〇(M2)Yuki Miwa¹, Akinori Oda², Hiroyuki Kousaka³, Takayuki Ohta¹ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Gifu Univ.)

10:45 AM - 11:00 AM

[20a-438-7] The Effect of Sub. Temperature and H₂ Addition on DLC Films Deposited by an APμPlasma

〇Hiroyuki Yoshiki¹, Junki Sato¹, Kousuke Gando^1,2 (1.Tsuruoka NCT, 2.Canon Inc.)

11:00 AM - 11:15 AM

△ [20a-438-8] Defect termination mechanism of amorphous carbon films by atomic hydrogen

〇Yasuyuki Ohashi¹, Hirotsugu Sugiura¹, Hiroki Kondo¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Makoto Sekine¹, Masaru Hori² (1.Nagoya Univ. Eng., 2.Nagoya Univ. Inst. Innovation for Future Society)

11:15 AM - 11:30 AM

[20a-438-9] Effects of hydroxy group in nanographene synthesis employing in-liquid plasma

〇Hiroki Kondo¹, Atsushi Ando¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Mineo Hiramatsu², Makoto Sekine¹, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Meijo Univ. Sci. Eng., 3.Nagoya Univ. Inst. Innovation for Future Society)

11:30 AM - 11:45 AM

△ [20a-438-10] Control of sp² carbon bonds in amorphous carbon films by formation of precursor radicals depending on a residence time

〇Hirotsugu Sugiura¹, Yasuyuki Ohashi¹, Lingyun Jia¹, Hiroki Kondo¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda², Makoto Sekine¹, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Meijo Univ., 3.Nagoya Univ. Inst. of Innovation for Future Society)

11:45 AM - 12:00 PM

[20a-438-11] Effects of deposition precursors on Si network orderliness

〇Kazunori Koga¹, Kazuma Tanaka¹, Hisayuki Hara¹, Liu Shi¹, Shinya Nakano¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Naho Itagaki¹, Masaharu Shiratani¹ (1.Kyushu Univ.)

12:00 PM - 12:15 PM

△ [20a-438-12] Numerical Analysis for Reactions of TEOS and SiO₂ in Plasma Enhanced CVD

〇HU LI¹, Satoru Kawaguchi^2,3, Hisashi Higuchi¹, Kazuki Denpoh¹, Kohki Satoh² (1.TTS, 2.Muroran Inst. Tech., 3.JSPS Research Fellow)

Oral presentation

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 1:45 PM - 7:15 PM 438 (3F_Lounge)

Kenji Ishikawa(Nagoya Univ.), Mitsuhiro Omura(Toshiba Memory)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[20p-438-1] Selective Cyclic Etching of Lanthanum Oxide Using Formation and Desorption of Organo-Lanthanum Complex

〇Yoshihide Yamaguchi¹, Kazunori Shinoda¹, Sumiko Fujisaki¹, Yutaka Kouzuma², Kohei Kawamura², Masaru Izawa² (1.Hitachi, Ltd. R&D group, 2.Hitachi High-technologies)

2:00 PM - 2:15 PM

[20p-438-2] 【Highlighted Presentation】Demonstration of Self-limiting Characteristics and Selectivity Control in Annealing Steps for Rapid Thermal-Cyclic ALE

〇Kazunori Shinoda^1,3, Hiroyuki Kobayashi¹, Nobuya Miyoshi², Kohei Kawamura², Masaru Izawa², Kenji Ishikawa³, Masaru Hori³ (1.Hitachi R&D, 2.Hitachi High-Tech, 3.Nagoya Univ.)

2:15 PM - 2:30 PM

▲ [20p-438-3] Atomic-layer etching (ALE) of magnetic films by Hexafluoroacetylacetone (HFAC) molecules

〇(D)Abdulrahman Hikmat Basher¹, Michiro Isobe¹, Tomoko Ito¹, Masato Kiuchi², Take Takeuchi³, Kazuhiro Karahashi¹, Ikutaro Hamada¹, Yoshitada Morikawa¹, Satoshi Hamaguchi¹ (1.Osaka Univ., 2.AIST, 3.Nara Womens Univ.)

2:30 PM - 2:45 PM

△ [20p-438-4] Hydrogen plasma modification mechanism of silicon nitride surface by in-situ surface analysis

〇(M1)Kazuya Nakane¹, Rene Henricus Jozef Vervuurt², Takayoshi Tsutsumi¹, Akiko Kobayashi², Nobuyoshi Kobayashi², Masaru Hori³ (1.Nagoya Univ. Eng., 2.ASM Japan, 3.Inst. of innovation for Future Society, Nagoya Univ.)

2:45 PM - 3:00 PM

△ [20p-438-5] Effects to addition of H₂into Cl₂plasma at high temperature for etching of GaN

〇(M1)Takahiro Omichi¹, Tanide Atsushi^1,2, Ishikawa Kenji¹, Tsutsumi Takayoshi¹, Kondo Hiroki¹, Sekine Makoto¹, Hori Masaru¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

3:00 PM - 3:15 PM

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O₂/CF₄ Plasma

〇Shota Ishikawa¹, Haruka Suzuki¹, Tsuyoshi Honda², Hirotaka Toyoda¹ (1.Nagoya Univ., 2.Nissin)

3:15 PM - 3:30 PM

[20p-438-7] Study of formation of sidewall striation in high aspect ratio hole etching

〇Junichi Hashimoto¹, Mitsuhiro Omura¹, Takahiro Adachi¹, Yusuke Kondo¹, Masao Ishikawa¹, Junko Abe¹, Takaya Matsushita¹, Hisataka Hayashi¹ (1.Toshiba Memory Corp.)

3:30 PM - 3:45 PM

[20p-438-8] SiO₂ and Si etching reactions by SFx⁺ ion bombardment

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Junichi Hashimoto², Mitsuhiro Omura², Hisataka Hayashi², Satoshi Hamaguchi¹ (1.Graduate School of Engineering, Osaka Univ., 2.Toshiba Momory Corporation)

3:45 PM - 4:00 PM

[20p-438-9] Electronic properties and dissociation channels of C₂H_xF_y compounds (III)

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

4:00 PM - 4:15 PM

▼ [20p-438-10] Physical etching of surfaces made of Lennard-Jones atoms: a Molecular Dynamics study

〇Nicolas Aini Mauchamp¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (1.Osaka University)

4:15 PM - 4:30 PM

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO₂by energetic fluorocarbon ion injection

〇(M1)Charisse Cagomoc¹, Michiro Isobe¹, Kazuhiro Karahashi¹, Takuya Hirohashi², Junichi Hashimoto², Mitsuhiro Omura², Hisataka Hayashi², Satoshi Hamaguchi¹ (1.Osaka University, 2.Toshiba Memory Corp.)

4:45 PM - 5:00 PM

[20p-438-12] [Young Scientist Presentation Award Speech] First-principles-based prediction of the local structures damaged by plasma exposures (2)

〇Yuuta Yoshikawa¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:00 PM - 5:15 PM

△ [20p-438-13] Effects of Nitrogen Ambient Annealing on the Recovery of Plasma-induced Defect Structures in Silicon Nitride Films

〇Tomohiro Kuyama¹, Yuta Yoshikawa¹, Yoshihiro Sato¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

△ [20p-438-14] A Characterization Technique of Plasma Process-Induced Latent Defects in Si Substrate by Isothermal Capacitance Transient Spectroscopy

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

[20p-438-15] Generation & annihilation of plasma-induced defects ~ defect monitoring on c-Si substrate ~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

5:45 PM - 6:00 PM

[20p-438-16] Mechanism of fluorine-enhanced diffusion in III-V semiconductor compounds

〇Yoshifumi Zaizen¹, Fukasawa Masanaga¹, Minari Hideki¹ (1.Sony Semiconductor Solutions Coporation)

6:00 PM - 6:15 PM

[20p-438-17] Nitriding treatment by Active Screen Plasma and its evaluation ２

〇(PC)Susumu Ichimura¹, Seigo Takashima¹, Ippei Tsuru², Daichi Ohkubo², Hideaki Matsuo², Mineo Goto² (1.Nagoya Industries Promotion Corporation, 2.NAKANIHON-RO KOGYO CO., LTD.)

6:15 PM - 6:30 PM

[20p-438-18] Effect of H₂-N₂ plasma treatment on surface properties of titanium alloy

〇Koki Niimura¹, Zhongqiu Lin¹, Toshiaki Suzuki^1,2, Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ., 2.JEOL)

6:30 PM - 6:45 PM

△ [20p-438-19] Improvement of Uniformity on Microwave Excited Plasma Production Using Slot Antenna

〇Takeshi Aizawa¹, Taishin Shimada¹, Yu Tanakajima¹, Tatsuo Ishijima¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹ (1.Kanazawa Univ.)

6:45 PM - 7:00 PM

△ [20p-438-20] Surface Modification of Polytetrafluoroethylene by Atmosheric Pressure Plasma of Ar/Water Vapor Mixture Gas

〇(B)Masahiko Tani¹, Hideki Yajima², Hiroshi Furuta¹, Akimitsu Hatta¹ (1.Kochi Univ. Technol., 2.ORC Manufacturing)

7:00 PM - 7:15 PM

△ [20p-438-21] Influence of plasma gas temperature and gas species on surface treatment using atmospheric pressure plasma

〇Shohei Moriya¹, Yusuke Iijima¹, Yuma Suenaga¹, Shunsuke Watanabe², Hidekazu Miyahara³, Chiaki Sato², Akitoshi Okino¹ (1.Tokyo Tech FIRST, 2.Tokyo Tech MSL, 3.School of Science, Tokyo Univ.)

Poster presentation

[21p-PB1-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Fri. Sep 21, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[21p-PB1-1] Short gap RF-magnetron sputtering deposition of Ga-doped ZnO film on glass substrate with buffer layer

〇Yoshinobu Matsuda¹, Naoki Matsuo¹, Masaki Ishiba¹, Tomohiro Furusato¹, Takahiko Yamashita¹ (1.Nagasaki Univ.)

1:30 PM - 3:30 PM

[21p-PB1-2] Formation of High-Mobility IGZO Thin Film Transistors with Plasma Enhanced Reactive Sputter Deposition (III)

〇Kosuke Takenaka¹, Masashi Endo¹, Tomoki Yoshitani¹, Giichiro Uchida¹, Akinori Ebe², Yuichi Setsuhara¹ (1.Osaka Univ., 2.EMD Corp.)

1:30 PM - 3:30 PM

[21p-PB1-3] Preparation of AZO and PVDF thin films on Polycarbonate by RF sputtering

〇Kosei Sugawara¹, Yasunori Ohtsu¹ (1.Saga Univ.)

1:30 PM - 3:30 PM

[21p-PB1-4] Optical properties of TiN_x thin film fabricated by RF reactive magnetron sputtering

〇Yusuke Kondo¹, Ayako Hioki¹, Yoshiharu Kakehi¹, Kazuo Satoh¹, Yong-Gu Shim² (1.ORIST, 2.Osaka Pref. Univ.)

1:30 PM - 3:30 PM

[21p-PB1-5] Behavior of nitrogen species in high power impulse magnetron sputtering

〇Masayuki Nakamura¹, Takayuki Ohta¹, Keigo Takeda¹ (1.Meijo Univ.)

1:30 PM - 3:30 PM

[21p-PB1-6] Development of rotational double magnetron sputtering device for effective target utilization

〇(M2)Yutarou Nakamura¹, Rei Tanaka¹, Ohtsu Yasunori¹ (1.Saga Univ.)

1:30 PM - 3:30 PM

[21p-PB1-7] Development of rotational cross-shaped RF magnetron sputtering system for improving target utilization

〇(M1)Rei Tanaka¹, Yasunori Ohtu¹, Yutaro Nakamura¹ (1.Saga Univ.)

1:30 PM - 3:30 PM

[21p-PB1-8] Graphene Film Formation by Microwave Surface Plasma Pulsing

〇Yota Mabuchi¹, Tesuo Soga¹, Masayoshi Umeno² (1.NIT, 2.C's tech)

1:30 PM - 3:30 PM

[21p-PB1-9] Infrared Spectroscopy of Deposition Process of Amorphous Carbon Film during Ethylene Plasma, Compared with during Other Hydrocarbon Plasmas

〇Masanori Shinohara¹, Taisuke Tominaga¹, Hayato Shimomura¹, Takeshi Ihara¹, Yoshihito Yagyu¹, Tamiko Ohshima¹, Hiroharu Kawasaki¹ (1.NIT, Sasebo College)

1:30 PM - 3:30 PM

[21p-PB1-10] Evaluation of isocyanate group on CNTs formed by plasma treatmen

〇Kazuki Michiya¹, Hideo Uchida¹, Daisuke Ogawa¹, Keiji Nakamura¹ (1.Chubu Univ.)

1:30 PM - 3:30 PM

[21p-PB1-11] Layer-Controlled Grown of MoS₂ by CVD and Dependence of Hydrogen Post-Plasma Treatment on S/Mo Ratio

〇Masahiro Sugiyama¹, Akihisa Ogino^1,2 (1.Shizuoka Univ., 2.Shizuoka Univ.)

1:30 PM - 3:30 PM

[21p-PB1-12] Evaluation of Visible Light Responsive TiO₂ Irradiated with Nitrogen Plasma

〇Hayato Tomii¹, Taishi Hirose¹, Yuichirou Takemura¹ (1.Kindai Univ.)

1:30 PM - 3:30 PM

[21p-PB1-13] Improvement of Water Permeability of Porous Dielectrics by An Atmospheric Pressure Plasma Jet

〇Tatsuru Shirafuji¹, Masato Oshiro¹, Yuki Hamamoto¹, Jun-Seok Oh¹, Ryo Sugama², Kumi Orita², Hiromitsu Toyoda² (1.Osaka CU Eng., 2.Osaka CU Med.)

1:30 PM - 3:30 PM

[21p-PB1-14] Surface Treatment of Fluorocarbon Polymers using Elongated Large-Area Parallel Plate Electrode Type Dielectric Barrier Discharge

〇Kazuya Sugiyama¹, Akihisa Ogino¹, Masaaki Nagatsu^1,2 (1.Shizuoka univ., 2.Research Institute of Electronics, Shizuoka Univ.)

1:30 PM - 3:30 PM

[21p-PB1-15] Ashing characteristics of polyimide by radio frequency hollow cathode discharge plasma using Ar/O₂ mixed gas

〇(M1)Shinnosuke Honda¹, Yasunori Ohtsu¹ (1.Saga Univ.)

1:30 PM - 3:30 PM

[21p-PB1-16] Numerical Analysis on Substrate-Incident Flux in Non-Equilibrium Atmospheric-Pressure Hydrocarbon Plasmas for Carbon Materials Fabrication

〇Masahiro Kojima¹, Kazuma Ohki¹, Akinori Oda¹, Takayuki Ohta², Hiroyuki Kousaka³ (1.Chiba Inst. Technol., 2.Meijo Univ., 3.Gifu Univ.)

1:30 PM - 3:30 PM

[21p-PB1-17] Preparation of Composite Nanoparticles by Underwater Pulsed Wire Discharge

〇Yoshinori Tokoi¹, Saperi Abdul Tasha¹ (1.NIT, Nagaoka Col.)

1:30 PM - 3:30 PM

[21p-PB1-18] XPS analysis of interface between metal and organic film by Ar gas ion cluster ion beam

〇Masashi Seki¹, Kazuki Nakamura², Sayaka Yamamoto², Hiromi Tanaka² (1.Toshiba TEC Corp., 2.National Institute of Technology, Yonago College)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-438-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [20a-438-1] Generation and analysis of ZnO nanoparticles using sputtering and laser

△ [20a-438-4] Sputter Epitaxy of In-rich (ZnO)x(InN)1-x Films Directly on Sapphire Substrates

△ [20a-438-5] Production process of ions in high power pulse sputtering discharge using titanium target

△ [20a-438-6] Tribological properties of Si-doped DLC film deposited by dual magnetron sputtering

△ [20a-438-8] Defect termination mechanism of amorphous carbon films by atomic hydrogen

△ [20a-438-10] Control of sp2 carbon bonds in amorphous carbon films by formation of precursor radicals depending on a residence time

△ [20a-438-12] Numerical Analysis for Reactions of TEOS and SiO2 in Plasma Enhanced CVD

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▲ [20p-438-3] Atomic-layer etching (ALE) of magnetic films by Hexafluoroacetylacetone (HFAC) molecules

△ [20p-438-4] Hydrogen plasma modification mechanism of silicon nitride surface by in-situ surface analysis

△ [20p-438-5] Effects to addition of H2 into Cl2 plasma at high temperature for etching of GaN

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O2/CF4 Plasma

▼ [20p-438-10] Physical etching of surfaces made of Lennard-Jones atoms: a Molecular Dynamics study

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO2 by energetic fluorocarbon ion injection

△ [20p-438-13] Effects of Nitrogen Ambient Annealing on the Recovery of Plasma-induced Defect Structures in Silicon Nitride Films

△ [20p-438-14] A Characterization Technique of Plasma Process-Induced Latent Defects in Si Substrate by Isothermal Capacitance Transient Spectroscopy

△ [20p-438-19] Improvement of Uniformity on Microwave Excited Plasma Production Using Slot Antenna

△ [20p-438-20] Surface Modification of Polytetrafluoroethylene by Atmosheric Pressure Plasma of Ar/Water Vapor Mixture Gas

△ [20p-438-21] Influence of plasma gas temperature and gas species on surface treatment using atmospheric pressure plasma

[21p-PB1-1~18] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Authentication

△ [20a-438-4] Sputter Epitaxy of In-rich (ZnO)_x(InN)_1-x Films Directly on Sapphire Substrates

△ [20a-438-10] Control of sp² carbon bonds in amorphous carbon films by formation of precursor radicals depending on a residence time

△ [20a-438-12] Numerical Analysis for Reactions of TEOS and SiO₂ in Plasma Enhanced CVD

△ [20p-438-5] Effects to addition of H₂into Cl₂plasma at high temperature for etching of GaN

△ [20p-438-6] Photoresist Removal Treatment Using Atmospheric-Pressure Microwave O₂/CF₄ Plasma

▼ [20p-438-11] Molecular dynamics simulation of hole etching in SiO₂by energetic fluorocarbon ion injection