W crossbar resistive switches

D. Jana¹, S. Maikap¹, A. Prakash¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Tsai² (1.Chang Gung Univ., 2.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-3-3] Nanodome improved resistive switching memory performance using IrOx nano-dots embedded in AlOx film

W. Banerjee¹, S. Maikap¹ (1.Chang Gung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-3-4] Improved resistive switching memory characteristics using higher Ge content in Gex(0.2-0.5)Se1-x solid-electrolytes

S. Maikap¹, S. Z. Rahaman¹, Y. Hsuan¹, C. S. Lai¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-4-1] Electrical control of the spin-orbit interaction in a single InAs self-assembled Quantum dot

R. Deacon^1,2, Y. Kanai¹, S. Takahashi⁴, A. Oiwa^1,3, K. Shibata^3,4, K. Hirakawa^3,4, Y. Tokura⁵, S. Traucha¹ (1.Advanced Device Laboratory, RIKEN, 2.Univ. of Tokyo,, 3.CREST, Japan Science and Tech. Agency, Kawaguch, Saiatma, Japan., 4.Inst. of Industrial Science, The Univ. of Tokyo, Komaba, Tokyo, Japan., 5.Graduate School of Pure and Applied Physics, Univ. of Tsukuba, Ibaraki, Japan. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-4-2] Transient Current in the Spin Blockade Region of a Double Quantum Dot

S. Sharmin¹, K. Muraki², T. Fujisawa¹ (1.Tokyo Tech., 2.NTT Basic Res. Labs. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-4-3] The observation of rectangle shape geometric current blockade in vertical double quantum dots

Y. C. Sun¹, S. M. Huang², J. J. Lin^1,3, K. Kono⁴, K. Ono⁴ (1.National Chiao-Tung Univ., 2.National Sun Yat-Sen Univ., 3.National Chiao-Tung Univ. , Taiwan, 4.Low Temperature Lab., RIKEN , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-4-4] Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures

K. Yamada¹, T. Kodera^1,2,3, T. Kambara¹, Y. Kawano¹, S. Oda¹ (1.Quantum Nanoelectronics Research Center, Tokyo Tech., 2.Inst. for Nano Quantum Information Electronics, The Univ. of Tokyo, 3.PRESTO, Japan Science and Tech. Agency (JST) , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-5-1] Detection of nuclear spin signals from a quantum dot under Kondo effect regime

M. Kawamura¹ (1.RIKEN , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-5-2] Detection of a charge qubit by the Kondo and the Fano-Kondo effects in quantum dots

T. Tanamoto¹, Y. X. Liu², X. Hu³, F. Nori⁴ (1.Toshiba Corp. , Japan, 2.Tsinghua Univ, , China, 3.Univ. at Baffalo, SUNY , USA, 4.Riken , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-5-3] Electron Spin Depolarization in Non-equilibrium Quantum Wires Accompanied with Dynamic Nuclear Polarization Detected by the Noise Measurement

K. Chida¹, M. Hashisaka^1,2, Y. Yamauchi¹, S. Nakamura^1,3, T. Arakawa¹, T. Machida⁴, K. Kobayashi¹, T. Ono¹ (1.ICR, Kyoto Univ., 2.Tokyo Tech., 3.AIST, 4.IIS and INQIE, Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download