[PS-13-16L] Estimation of metal-graphene interaction strength through quantum capacitance extraction of graphene in contact with metal

R. Ifuku¹, K. Nagashio¹, T. Nishimura¹, A. Toriumi¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-13-17L] Electric-field dependence of G-band spectra in bilayer graphene

Y. Yamashiro¹, Y. Ohno¹, K. Maehashi¹, K. Inoue¹, K. Matsumoto¹ (1.ISIR, Osaka Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-1] Characterization of Temperature Dependence of Parasitic Diodes of SiC JFETs for Transient Thermal Resistance Measurement

T. Kim¹, T. Funaki¹ (1.Univ. of Osaka , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-2] Parasitic Bipolar Effect of a Thin-film SOI Power MOSFET in High Temperature

A. Uchida¹, Y. Morisawa¹, S. Matsumoto¹ (1.Kyusyu Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-3] Investigation of BTI degradation in LDMOS transistors

Y. Ikeda¹, H. Mori¹, T. Kato¹, T. Uemura¹, M. Yoshida¹, M. Onoda¹, H. Matsuyama¹ (1.Fujitsu Semiconductor Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-4] Photoluminescence of Dislocations in 4H-SiC Epitaxial Layers

M. Nagano¹, I. Kamata¹, H. Tsuchida¹ (1.Central Research Inst. of Electric Power Industry , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-5] Conductivity Degradation of 4H-SiC Pin Diode with In-grown Stacking Faults

A. Tanaka¹, K. Nakayama¹, K. Asano¹, T. Miyazawa², H. Tsuchida² (1.Kansai Electric Power Co., Inc., 2.Central Res. Inst. of Electric Power Industry , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-6] Influence of stacking faults and surface morphology in triangular defects on 4H-SiC junction barrier Schottky diodes

K. Konishi¹, S. Nakata¹, Y. Nakaki¹, Y. Nakao¹, A. Nagae¹, T. Tanaka¹, Y. Toyoda¹, H. Sumitani², T. Oomori² (1.Advanced Tech. R&D Center, Mitsubishi Electric Corporation,, 2.Power Device Works, Mitsubishi Electric Corporation, , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-7] High temperature operation of diamond Schottky diodes above 750 degrees

K. Ueda¹, K. Kawamoto¹, T. Soumiya¹, E. Bustarret², H. Asano¹ (1.Nagoya Univ. , Japan, 2.Inst. Neel, CNRS , France)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-8] A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction

C. Y. Hung¹, K. H. Lo¹, C. M. Hu², C. H. Chu², D. C. Chang³, J. Gong⁴, C. F. Huang¹ (1.National Tsing Hua Univ., 2.TPK Touch solutions Inc., 3.National Chip Implementation Center, 4.Tung Hai Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (631 - 640)

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