The Japan Society of Applied Physics

665 results (121 - 130)

[D-7-2] W vs. Co-Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22nm Tech. Nodes

A. Veloso1, S. A. Chew1, T. Schram1, H. Dekkers1, A. Van Ammel1, T. Witters1, H. Tielens1, N. Heylen1, K. Devriendt1, F. Sebaai1, S. Brus1, L. A. Ragnarsson1, L. Pantisano1, G. Eneman1, L. Carbonell1, O. Richard1, 1P. Favia1, 1J. Geypen1, 1H. Bender1, 1Y. Higuchi2, 2A. Phatak3, 3A. Thean1, 1N. Horiguchi1 (1.IMEC , Belgium, 2.Panasonic , Japan, 3.Applied Materials Belgium NV , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (121 - 130)