The Japan Society of Applied Physics

665 results (191 - 200)

[F-6-3] Lateral High-Voltage 4H-SiC IGBTs

W. S. Lee1, C. Y. Cheng1, K. W. Chu1, C. F. Huang1, F. Zhao2, L. S. Lee3, Y. S. Chen3, C. Y. Lee3, M. J. Tsai3 (1.National Tsing Hua Univ. , Taiwan, 2.Washington State Univ. , USA, 3.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-7-1] High Quality SiO2/Al2O3 Gate Stack for GaN MOSFET

H. Kambayashi1,2, T. Nomura1, H. Ueda3, K. Harada4, Y. Morozumi4, K. Hasebe4, A. Teramoto2, S. Sugawa2, T. Ohmi2 (1.Advanced Power Device Reserch Association, 2.Tohoku Univ., 3.Tokyo Electron Tech. Deveropment Inst. Inc., 4.Tokyo Electron Tohoku Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (191 - 200)