[B-5-2] Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Ti-rich TiN electrode

B. Kim¹, W. Kim¹, H. Kim¹, K. Jung¹, W. Park¹, B. Seo¹, M. Joo¹, K. Lee¹, K. Hong¹, S. Park¹ (1.SK Hynix Inc. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-5-3] Formation free and high-performance cross-point resistive switching memory using Ir/TaOx/W structure

A. Prakash¹, S. Maikap¹, C. S. Lai¹, W. S. Chen², H. Y. Lee², F. T. Chen², M. J. Tsai² (1.Chang Gung Univ., 2.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-5-4L] Investigation of Resistive Switching Mechanism and Improved Memory Characteristics Using IrOx/high-kx/W Structure

S. Maikap¹, W. Banerjee¹, B. L. You¹, D. Jana¹, H. Y. Lee², W. S. Chen², F. T. Chen², M. J. Kao², M. J. Tsai² (1.Chang Gung Univ., 2.Electronics and Opto-Electronics Res. Laboratories, Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-6-1] A Physics-based Model of Resistive Switching in Metal Oxides

D. Ielmini¹, S. Larentis¹, S. Balatti¹ (1.Politecnico di Milano , Italy)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-6-2] Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory

Y. S. Chen¹, P. S. Chen², H. Y. Lee¹, K. H. Tsai¹, T. Y. Wu¹, C. H. Tsai¹, W. S. Chen¹, P. Y. Gu¹, F. Chen¹, M. J. Tsai¹ (1.Indus. Tech. Res. Inst., 2.MingShin Univ. of Science & Tech. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Threshold switching and conductance quantization in Al/HfO2/Si(p) structures

J. Sune¹, E. Miranda¹, D. Jimenez¹, X. Saura¹, S. Long², L. Ming², J. M. Rafi³, F. Campabadal³ (1.Univ. Autonoma de Barcelona , Spain, 2.Inst. of Microelectronics Chinese Academy of Sciences , China, 3.Inst. de Microelectronica de Barcelona, CSIC , Spain)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] Improved Resistive-switching Performance of HfO2-based RRAM devices by Reduction Effect of Hydrogen Annealing: Defect Engineering

S. Kim¹, D. Lee¹, J. Park¹, S. Jung¹, W. Lee¹, J. Shin¹, J. Woo¹, G. Choi¹, E. Cha¹, H. Hwang¹ (1.Gwangju Inst. of Science and Tech. , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-6-5L] Physical Guiding Principles for High Quality ReRAM Stack with Al2O3 O Vacancy Barrier Layer

M. Y. Yang¹, K. Kamiya¹, B. Magyari Kope², M. Niwa¹, Y. Nishi², K. Shiraishi¹ (1.Univ. of Tsukuba , Japan, 2.Univ. of Stanford , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] Resistive Switching in Transition Metal Oxide ReRAM Devices

B. Magyari-Köpe¹, Y. Nishi¹ (1.Stanford Univ. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Promising Bipolar and Unipolar Resistive Switching in Ti-Doped Yb2O3 Thin Film

S. Mondal¹, F. H. Chen¹, C. W. Wang¹, J. L. Her¹, Y. H. Matsuda², T. M. Pan¹ (1.Chang Gung Univ. , Taiwan, 2.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

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