[C-8-3] Theory of Graphene on SiC(11-20)a Substrate

H. Kageshima¹, H. Hibino¹ (1.NTT Basic Res. Labs. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges

T. Ando¹, M. M. Martin¹, E. A. Cartier¹, B. P. Linder¹, J. Rozen¹, K. Choi² (1.IBM T. J. Watson Research Center, 2.GLOBALFOUNDRIES , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.

A. Veloso¹, S. A. Chew¹, Y. Higuchi², L. A. Ragnarsson¹, E. Simoen¹, T. Schram¹, T. Witters¹, A. Van Ammel¹, H. Dekkers¹, H. Tielens¹, K. Devriendt¹, N. Heylen¹, F. Sebaai¹, S. Brus¹, P. Favia¹, J. Geypen¹, H. Bender¹, A. Phatak³, M. S. Chen⁴, X. Lu⁴, S. Ganguli⁴, Y. Lei⁴, W. Tang⁴, X. Fu⁴, S. Gandikota⁴, A. Noori⁴, A. Brand⁴, N. Yoshida⁴, A. Thean¹, N. Horiguchi¹ (1.IMEC , Belgium, 2.Panasonic , Japan, 3.Applied Materials Belgium NV , Belgium, 4.Applied Materials Inc. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Enhanced Hole Mobility in High-k Gated pMOSFETs by Dislocation-free Epitaxial Si/Ge Super-lattice Channel

L. J. Liu¹, K. S. Chang Liao¹, C. H. Fu¹, H. C. Hsieh¹, C. C. Lu¹, T. K. Wang¹, P. Y. Gu², M. J. Tsai² (1.National Tsing Hua Univ., 2.Indus. Tech. Res. Inst. , Taiwan, R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] RMG Tech. Integration in FinFET Devices

G. Boccardi¹, R. Ritzenthaler¹, M. Togo¹, T. Chiarella¹, M. S. Kim¹, S. Yuichiro¹, A. Veloso¹, S. A. Chew¹, E. Vecchio¹, S. Locorotondo¹, K. Devriendt¹, P. Ong¹, S. Brus¹, N. Horiguchi¹, A. Thean¹ (1.IMEC , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Fabrication and Demonstration of Ultra Short Channel Atomically Thin SOI MOSFETs (AT-FET) Using Anisotropic Wet Etching and Lateral Dopant Diffusion

S. Migita¹, Y. Morita¹, M. Masahara¹, H. Ota¹ (1.GNC-AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Raman spectroscopy for strain measurement in state-of-the-art LSI

A. Ogura¹, D. Kosemura¹, M. Takei², M. Tomita² (1.School of Science and Tech., Meiji Univ., 2.JSPS Research Fellow , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

M. Mizuo¹, T. Yamaguchi², S. Kudo², Y. Hirose^1,2, H. Kimura², J. Tsuchimoto², N. Hattori² (1.Renesas Semiconductor Engineering Corp., 2.Renesas Electronics Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Band-offset Determination at Ge/GeO2 Interface by Internal Photoemission and Charge-corrected X-ray Photo-electron Spectroscopies

W. F. Zhang^1,2, T. Nishimula^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Characterization of phosphorus-implanted n+/p Ge junctions by reversely biased leakage current and Raman spectroscopy

C. H. Lee^1,2, T. Tabata^1,2, T. Nishimura^1,2, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download