[E-1-2] Analytical Formulas for the Drain Current of Silicon Nanowire MOSFET

K. Natori¹ (1.Tokyo Inst. Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-1-3] Extraction of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire MOSFETs

K. Mao¹, T. Saraya¹, T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-1-4] High performance nanoscale n-MOS gate-all-around poly-Si thin film transistors by microwave annealing

M. S. Yeh¹, Y. C. Wu¹, Z. Y. Tang¹, H. F. Hung¹, Y. J. Lee² (1.Univ. of National Tsing Hua, 2.National Nano Device Labs , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-1-5] Systematic Study of Back-Gate Bias Effects in Ultrathin-BOX Tri-gate (UTBT) Transistor with 10nm-Diameter Nanowire Channel

K. Ota¹, M. Saitoh¹, C. Tanaka¹, T. Numata¹ (1.Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] Device Architectures and Their Integration Challenges for 1x nm node: FinFETs with High Mobility Channel

N. Horiguchi¹, G. Zschaetzsch¹, Y. Sasaki¹, A. K. Kambham¹, M. Togo¹, L.-Å. Ragnarsson¹, J. Mitard¹, J. Franco¹, G. Eneman¹, G. Hellings¹, L. Witters¹, T. Romeo¹, L. Pantisano¹, N. Waldron¹, D. Lin¹, N. Collaert¹, W. Vandervorst¹, A. Thean¹ (1.Inst. voor Ker and Stralings Fysika , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] Investigation and Comparison of Work Function Variation for FinFET and Ultra-Thin-Body SOI Devices Using a Voronoi Approach

S. H. Chao¹, M. L. Fan¹, P. Su¹ (1.Univ. of National Chiao Tung , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] Impact of Junction Non-abruptness on Random Discrete Dopant Induced Variability in Intrinsic Channel Tri-gate MOSFETs

K. L. Wei¹, X. Y. Liu¹, G. Du¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-2-4] 2D and 3D Fully-Depleted Extension-less Devices for Advanced Logic and Memory Applications

A. Veloso¹, A. De Keersgieter¹, M. Aoulaiche¹, M. Jurczak¹, A. Thean¹, N. Horiguchi¹ (1.IMEC , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-2-5L] The impact of Side Surface Roughness on Carrier Mobility in Tri-Gate Silicon Nanowire MOSFETs

K. Mao¹, T. Saraya¹, T. Hiramoto¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-3-1] III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS

S. Takagi¹, S. H. Kim¹, R. Zhang¹, M. Yokoyama¹, N. Taoka^1,2, M. Takenaka¹ (1.Univ. of Tokyo, 2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download