[E-3-2] AN EXTENDED "Y FUNCTION" METHOD FOR SATURATION REGIME CHARACTERIZATION: APPLICATION TO BULK Si AND Ge TECHNOLOGIES

C. Diouf^1,2, A. Cros¹, S. Monfray¹, J. Mitard³, J. Rosa¹, D. Gloria¹, G. Ghibaudo² (1.Indus STMicroelectronics, 2.IMEP lab , FRANCE, 3.IMEC lab , BELGIUM)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-3-3] Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

M. Oda¹, T. Irisawa¹, Y. Kamimuta¹, O. Ichikawa², T. Tezuka¹ (1.AIST, 2.Sumitomo Chemical Co. Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-4-1] A Physics-Based Compact Model of Tunnel-FETs Considering Nonlocal Effects

K. Fukuda¹, T. Mori¹, W. Mizubayashi¹, Y. Morita¹, A. Tanabe¹, M. Masahara¹, T. Yasuda¹, S. Migita¹, H. Ota¹ (1.GNC, AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-4-2] Tunnel Field Effect Transistor with Epitaxially Grown Steep Tunnel Junction Fabricated by Source/Drain-first and Tunnel-junction-last Processes

Y. Morita¹, T. Mori¹, S. Migita¹, W. Mizubayashi¹, A. Tanabe¹, K. Fukuda¹, M. Masahara¹, H. Ota¹ (1.GNC-AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-4-3] First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction

K. Tomioka^1,2, M. Yoshimura¹, T. Fukui¹ (1.Hokkaido Univ., 2.JST-PRESTO , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-4-4] Sub-10-nm nano-sheet channel of Junctionless Poly-Si TFT with oxidation thinning method

Y. C. Cheng¹, H. B. Chen², J. J. Wu², M. H. Han², Y. C. Wu¹, C. Y. Chang² (1.Univ. of National Tsing Hua, 2.Univ. of National Chiao Tung , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-5-1] Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms

T. Ohashi¹, T. Takahashi¹, T. Kodera², S. Oda², K. Uchida³ (1.Dept. of Phys. Elec., Tokyo Tech., 2.QNERC, Tokyo Tech., 3.Dept. of Elect. Eng., Keio Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-5-2] On the understanding of mobility degradation mechanisms in advanced CMOS devices: FDSOI versus bulk Tech.

I. Ben Akkez^1,3, C. Diouf^1,3, A. Cros¹, C. Fenouillet Beranger^1,2, P. Perreau^1,2, F. Balestra³, G. Ghibaudo³, F. Boeuf¹ (1.STmicroelectronics, 2.CEA-LETI, 3.IMEP/LAHC , France)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-5-3] Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel PFETS: A TCAD Study

G. Eneman¹, A. De Keersgieter¹, L. Witters¹, J. Mitard¹, B. Vincent¹, A. Hikavyy¹, R. Loo¹, N. Horiguchi¹, N. Collaert¹, A. Thean¹ (1.IMEC , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-5-4] Impacts of Surface Roughness Reduction in (110) Si Substrates by High Temperature Annealing on Electron Mobility in n-MOSFETs on (110) Si

S. H. Jeon¹, N. Taoka^1,2, H. Matsumoto³, K. Nakano³, S. Koyama³, H. Kakibayasi³, K. Araki⁴, M. Miyashita⁴, K. Izunome⁴, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Nagoya Univ., 3.Hitachi High-technologies Corp., 4.Covalent Silicon Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (141 - 150)

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