[L-1-2] Real Time Failure Imaging of Power Semiconductors under Power Stress using Scanning Acoustic Tomography

A. Watanabe¹, I. Omura¹ (1.Kyushu Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-1-3] Triggering Mechanism for Neutron Induced Single Event Burnout in Power Diode

T. Shoji¹, S. Nishida², K. Hamada² (1.Toyota Central R&D Labs., Inc, 2.Toyota Motor Corporation , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-1-4] Effects of Trap Energy Levels on Reverse Recovery Surge of Silicon Power Diode

S. Machida¹, Y. Yamashita¹, T. Misumi², T. Sugimaya¹ (1.Toyota Central R&D Labs. Inc., 2.Toyota Motor Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-1-5] Compact Modeling of Floating-Base Effect in IGBT Based on Potential Modification by Accumulated Charge

T. Yamamoto¹, M. Miyake², M. Miura Mattaush² (1.DENSO Corp., 2.Hiroshima Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-1-6] Super Junction Power MOSFET by Multi step Trench Process

J. M. Wang¹, K. Y. Tai¹, L. C. Wang¹, C. H. Huang², C. Lin², C. J. Lin¹, Y. C. King¹ (1.National Tsing-Hua Univ., 2.Taiwan Semiconductors Company Ltd. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-2-1] X-Ray Three-Dimensional Topography Analysis of Basal-Plane Dislocations and Threading Edge Dislocations in 4H-SiC

R. Tanuma¹, D. Mori², I. Kamata¹, H. Tsuchida¹ (1.Central Res. Inst. Electric Power Indus. (CRIEPI), 2.Fuji Electric Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-2-2] Evolution of threading edge dislocation during solution growth of SiC

S. Harada¹, Y. Yamamoto¹, K. Seki¹, A. Horio¹, T. Mitsuhashi¹, T. Ujihara¹ (1.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-2-3] Point Defect Reduction and Carrier Lifetime Improvement of Si- and C-face 4H-SiC Epilayers

T. Miyazawa¹, H. Tsuchida¹ (1.Central Res. Inst. of Electric Power Industry , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-2-4] Suppression of Al Memory Effect on Growing 4H-SiC Epilayers by Hot-wall Chemical Vapor Deposition

S.Y. Ji¹, K. Kojima¹, Y. Ishida¹, S. Yoshida¹, H. Tsuchida², H. Okumura¹ (1.National Inst. of Adv. Ind. Sci. and Tech., 2.Central Res. Inst. of Electric Power Indust. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[L-2-5] Phosphorus Doping of 4H-SiC by KrF Excimer Laser Irradiation in Phosphoric Solution

A. Ikeda¹, K. Nishi¹, H. Ikenoue¹, T. Asano¹ (1.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (361 - 370)

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