[F-3-4] Cross-correlation measurement of current noise in mesoscopic conductors using a homemade cryogenic transimpedance amplifier

M. Hashisaka¹, M. Yamagishi¹, K. Muraki², T. Fujisawa¹ (1.Tokyo Tech., 2.NTT Basic Research Laboratories , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-4-1] Polarization Junction based Super HFETs and derivatives in GaN

E. M .S. Narayanan¹, A. Nakajima^1,2, H. Kawai³, Y. Sumida³, V. Unni¹, M. Dhyani¹ (1.Univ. of Sheffield, 2.National Inst. of Advanced Industrial Science and Tech., 3.Powdec, KK. , UK)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-4-2] Low Leakage Current for 1.6kV Breakdown GaN HFET with 6um-thick Semi-insulating GaN on 6-inch Si

S. M. Cho¹, E. J. Hwang¹, J. M. Kim¹, J. H. Kim¹, J. H. Shin¹, J. Park¹, Y. J. Jo¹, W. S. Kim¹, H. J. Lee¹, K. Kim¹, T. Jang¹ (1.LG Electronics , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-4-3] AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process

X. Liu¹, C. Zhan¹, K. W. Chan², W. Liu³, D. Z. Chi⁴, L. S. Tan¹, K. J. Chen², Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore, 2.Hong Kong Univ. of Sci. and Tech. , Hong Kong, 3.Nanyang Technological Univ., 4.Inst. of Materials Res. and Engineering, Agency for Sci. Tech. and Res. , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-4-4] Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs

K. Tanaka¹, M. Ishida¹, T. Ueda¹, T. Tanaka¹ (1.Panasonic Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-5-1] Improvement of current collapse by surface treatment and passivation layer in p-GaN gate GaN HEMT

T. Katsuno¹, M. Kanechika¹, K. Itoh¹, K. Nishikawa¹, T. Uesugi¹, T. Kachi¹ (1.Toyota Central R&D Labs. Inc. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-5-2] Improved Electrical Characteristics of AlGaN/GaN HEMT with In-situ Deposited Silicon Carbon Nitride Cap Layer

N. Jeon¹, W. Choi¹, J. H. Lee², K. S. Kim², H. Y. Cha³, K. S. Seo¹ (1.Seoul National Univ., 2.Samsung Electronics Company Ltd., 3.Hongik Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-5-3] Enhancement mode AlGaN/GaN MIS-HEMTs using optimized Si3N4 gate insulator

W. Choi¹, H. Ahn¹, N. Jeon¹, I. Min¹, H. Cha², K. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-5-4] GaN Power Electronics and Applications

Y. Dora¹ (1.Transphorm , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-6-1] SiC Vertical Power JFETs for Efficient Power Switching

K. Matocha¹, D. Sheridan¹, K. Chatty¹, V. Bondarenko¹, J. B. Casady¹ (1.SemiSouth Laboratories Inc. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download