[PS-6-7] GaN-based Metal-Semiconductor-Metal Photodetectors Fabricated on Patterned Sapphire Substrates

K. T. Liu¹, S. J. Chang², S. Wu³, Y. S. Chang⁴ (1.Univ. of Cheng Shiu, 2.Univ. of National Cheng Kung, 3.Univ. of Tung-Fang Design, 4.Univ. of National Formosa , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-8] Temperature Effect on Electrical Properties of HfInZnO Amorphous Oxide Thin Film Transistor

J. S. Chang¹, J. H. Kim¹, D. W. Kwon¹, B. G. Park¹ (1.Natl. Univ. of Seoul , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-9] High performance dual-layer channel ZnO thin film transistor

Y. F. Geng^1,2, D. D. Han¹, J. Cai¹, W. Wang¹, L.L. Wang¹, Y. Tian¹, H. K. Yao¹, L. X. Qian³, Y. Wang¹, S. D. Zhang² (1.Peking Univ., 2.Shenzhen Graduate School of Peking Univ., 3.Beijing Inst. of Tech. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-10] Investigation of trapping properties in AlGaN/GaN HEMT heterostructures grown on silicon with thick buffer layers

J. Freedsman¹, T. Kubo¹, T. Egawa¹ (1.Nagoya Inst. of Tech., Research center for nano device and system , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-11] Effects of Annealing Method on the Electrical Characteristics of Solution-Processed InGaZnO Metal-Point-Contact Transistor

S. W. Lee¹, Y. H. Hwang¹, W. J. Cho¹ (1.Univ. of Kwangwoon , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-12] Fabrication of AlGaN/GaN HEMTs with Slant Field Plates by Using Deep-UV Lithography

H. C. Wang¹, Y. C. Lin¹, C. C. Chang¹, H. T. Hsu¹, T. E. Shie¹, L. C. Huang¹, C. C. Chung¹, E. Y. Chang¹ (1.National Chiao-Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-13] Enhancement of RF Characteristics of AlGaN/GaN HEMTs with Shield Source Field Plate using BCB

M. Lee¹, Y. M. Ryoo¹, N. Lee¹, H. Y. Cha², K. Seo¹ (1.Univ. of Seoul National, 2.Univ. of Hongik , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-14] Normally-off recessed AlGaN/GaN MOSHFETs using ICPCVD SiO2

B. R. Park¹, J. G. Lee¹, I. H. Min², K. S. Seo², H. Y. Cha¹ (1.Hongik Univ., 2.Seoul National Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-15] Power Schottky Barrier Diodes with Improved Schottky Contacts on AlGaN/GaN Heterostructures

N. Jeon¹, W. Choi¹, I. Min¹, H. Cha², K. Seo¹ (1.Seoul National Univ., 2.Hongik Univ. , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-16] AlGaN MSM Photo Sensors with AlN/SiN Nucleation Layers

C. H. Chen¹, M. H. Yang¹, W. C. Lin¹, C. M. Tsai¹ (1.Cheng Shiu Univ. , Taiwan (R.O.C.))

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (501 - 510)

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