[PS-9-4] Electron Focusing Effect in Ballistic Graphene Cross Junction

M. Onuki¹, S. Masubuchi¹, T. Yamaguchi¹, K. Watanabe², T. Taniguchi², T. Machida^1,3 (1.Univ. of Tokyo, 2.National Inst. of Material Science, 3.Japan Sci. and Tech. Agency , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-5] Magnetic Commensurability Effect in Ballistic Graphene

S. Morikawa¹, S. Masubuchi¹, K. Iguchi¹, M. Onuki¹, T. Yamaguchi¹, M. Arai¹, K. Watanabe², T. Taniguchi², T. Machida^1,3 (1.Univ. of Tokyo, 2.National Inst. of Material Science, 3.Japan Sci. and Tech. Agency , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-6] Resistance Switching Memory Characteristics of Si/CaF₂/CdF₂ Quantum-well Structures Grown on Metal(CoSi₂) Layer

J. Denda¹, K. Uryu¹, M. Watanabe¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-7] Nanogap ReRAM based on natural aluminum oxide

T. Miyabe¹, T. Nakaoka¹ (1.Sophia Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-8] Quantum Size Effects on Phonon Transport in Ge Quantum Dot/SiO2 System

C. C. Wang¹, J. Y. Chiou¹, J. C. Hsu¹, M. T. Hung¹, H. T. Chang¹, S. W. Lee¹, P. W. Li¹ (1.National Central Univ. , Taiwan (R. O. C.))

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-9] Electron Spin Lifetime in pnpn-Structured GaAs

T. Ito¹, H. Sugata², S. Tanigaki², M. Ichida², H. Ando² (1.Shizuoka Univ., 2.Konan Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-10] Spin-Canting Mediated Metallic State in Lightly Electron-Doped CaMnO₃

H. Ohnishi^1,3, S. Ishibashi^1,3, K. Terakura^1,2,3 (1.AIST, 2.JAIST, 3.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-11] Theoretical Examination on Significantly Low Off-State Current of a Transistor using Crystalline In-Ga-Zn Oxide

M. Murakami¹, K. Kato¹, K. Inada¹, T. Matsuzaki¹, Y. Takahashi¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-12] Silicon-based Floating-body Synaptic Transistor

H. Kim¹, J. H. Lee¹, G. Kim¹, M. C. Sun^1,2, B. G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics Corp. Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-9-13] Electric-field control of Mott transition in electrolyte-gated (Nd,Sm)NiO₃ thin film

S. Asanuma^1,2, P. H. Xiang^1,2, H. Yamada¹, H. Sato^1,2, I. H. Inoue^1,2, H. Akoh^1,2, A. Sawa^1,2, K. Ueno^3,4, M. Kawasaki^5,6, Y. Iwasa^5,6 (1.AIST, 2.JST-CREST, 3.Univ. of Tokyo, 4.JST-PRESTO, 5.Univ. of Tokyo, 6.CERG Riken , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (561 - 570)

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