[B-2-3] Single-Poly Flash Memory with Degradation-Separated Scheme

H. W. H. Ching¹, W. Robert¹, Y. Kevin¹, L. Yen Hsin¹, B. Francis¹, C. Hsin Ming¹, Y. Evans¹ (1.eMemory Tech. Inc. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-2-4] A Ultra-low-voltage operation on Ultra-thin poly-Si p-channel Flash Memory with Silicon Nanocrystals

H. B. Chen¹, S. H. Lin², J. J. Wu¹, Y. C. Wu², C. Y. Chang¹ (1.Univ. of National Chiao Tung Univ., 2.Univ. of National Tsing Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-2-5L] Exploring Trapped Charge Evolution in P-Channel SONOS Memory Device

F. H. Li¹, Y. Y. Chiu¹, Y. H. Lee¹, R. W. Chang¹, B. J. Yang¹, W. T. Sun², E. Lee², C. W. Kuo², R. Shirota¹ (1.National Chiao Tung Univ., 2.eMemory Tech. Inc. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] A Process Tech. and Characterization for 20nm PRAM

B. Kim¹, Y. Song¹, H. Jeong¹, D. Ha¹, Y. Kang¹, S. Ahn¹, J. Lee¹, K. Lee¹, D. Ahn¹, S. Nam¹, G. Jeong¹, C. Chung¹ (1.Samsung Electronics Corp. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] Novel 2-bit Multi-level PCRAM Structure with a Triple-layered Phase Change Material Stack for High-density Storage Applications

A. Gyanathan¹, Y. C. Yeo¹ (1.National Univ. of Singapore , Singapore)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Squarness Control in Polarization-electric filed Curves in Rhombohedral PZT Films

H. Funakubo¹, A. Sumi¹, H. Morioka¹, S. Okamoto¹, S. Yokoyama¹, T. Okamoto¹, Y. Ehara¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Ultra-Low Power Devices by Taking Advantages of Atom Switches with Polymer Solid-electrolyte

H. Hada¹, T. Sakamoto¹, M. Tada¹, N. Banno¹, M. Miyamura¹, K. Okamoto¹, N. Iguchi¹, T. Nohisa¹ (1.Low-power Electronics Association & Project , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories

G. Palma¹, E. Vianello¹, G. Molas¹, C. Cagli¹, F. Longnos², J. Guy¹, M. Reyboz¹, C. Carabasse¹, M. Bernard¹, F. Dahmani², D. Bretegnier², J. Liebault², B. De Salvo¹ (1.CEA, LETI, MINATEC Campus, 2.Altis Semiconductor , France)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Optimization of Conductive Filament of Oxide-based RRAM for Low Operation Current by Stochastic Simulation

P. Huang¹, Y. X. Deng¹, B. Gao¹, B. Chen¹, F. F. Zhang¹, D. Y¹, L. F. Liu¹, G. Du¹, J. F. Kang¹, X. Y. Liu¹ (1.Peking Univ. , P. R. China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[B-5-1] Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong¹, W. Wu¹, Z. Liu¹, X. A. Tran², H. Y. Yu³, Y. C. Yeo¹ (1.National Univ. of Singapore, 2.Nanyang Tech. Univ. , Singapore, 3.South Univ. of Sci. and Tech. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

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