[PS-3-11] Wire-Orientation Dependence in Device Performances of Si and InAs Nanowire MOSFETs under Ballistic Transport

K. Shimoida¹, Y. Yamada¹, H. Tsuchiya^1,2, M. Ogawa¹ (1.Kobe Univ., 2.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-12] A Novel Sub-20V Contact Gate MOSFET with Fully CMOS Compatible Process

T. L. Lee¹, M. T. Tsai¹, Y. C. King¹, C. J. Lin¹ (1.National Tsing-Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-13] Monte Carlo Study on the Role of High Channel Doping in Junctionless Transistors

K. Nagai¹, S. Koba¹, H. Tsuchiya^1,2, M. Ogawa¹ (1.Kobe Univ., 2.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-14] High-Performance CMOS Inverters Comprising Lateral Large-Grained Low-Temperature Poly-Si TFTs on Transparent Flexible Glass

S. Kamo¹, K. Kondo¹, A. Hara¹ (1.Tohoku Gakuin Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-15] Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion Implantation Induced Relaxation Technique

T. Mizuno¹, J. Takehi¹, Y. Abe¹, H. Akamatsu¹ (1.Kanagawa Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-16] An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction

X. Feng¹, W. Kang², Q. Cheng³, Y. Chen⁴ (1.Shenzhen Graduate School, Peking Univ., 2.Shenzhen Graduate School, Peking Univ., 3.Shenzhen Graduate School, Peking Univ., 4.Shenzhen Graduate School, Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-17] Extraction of Carrier Concentration and Mobility of Heavily Doped Poly-Si Nanowires with Junctionless (JL) Transistor Structures

Z. M. Lin¹, H. C. Lin^1,2, T. Y. Huang¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-18] Impact of Backgate Bias on the Sensitivity of Threshold Voltage to Process and Temperature Variations for Ultra-Thin-Body GeOI and InGaAs-OI MOSFETs Considering Quantum Confinement

C. H. Yu¹, P. Su¹ (1.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-19] Off-Current Fluctuations in 10-nm Trigate MOSFETs - Impact of the Channel Geometry

R. Granzner¹, F. Schwierz¹ (1.Ilmenau Univ. of Tech. , Germany)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-20] Analysis and Modeling of Geometry Dependent Thermal Resistances in MOSFETs

X. Zhou^1,2, T. Inoue¹, M. Kitamura¹, K. Matsuura¹, M. Miyake¹, T. Iizuka¹, H. Kikuchihara¹, M. Naito¹, H. J. Mattausch¹, J. He², M. MiuraMattausch¹ (1.Hirshima Univ. , Japan, 2.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (451 - 460)

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