[F-8-3] High-Performance Transparent Top-Gate AZO TFTs Fabricated by Low-Temperature Process

J. Cai¹, D. D. Han¹, Y. F. Geng¹, W. Wang¹, L. L. Wang¹, Y. Tian¹, H. K. Yao¹, L. X. Qian², S. D. Zhang¹, Y. Wang¹ (1.Peking Univ., 2.Beijing Inst. of Tech. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-8-4] Amorphous indium zinc oxide thin film transistors with ultra-high saturation mobility using Sm2O3 as gate insulator

W. K. Lin¹, J. W. Zheng², S. T. Chang¹, K. C. Liu² (1.National Chung Hsing Univ., 2.Chang Gung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-9-1] Reverse Gate Bias Stress on high-voltage AlGaN/GaN-on-Si Heterostructure FETs

S. Choi¹, J. Lee¹, H. Yoon¹, H. Cha¹, H. Kim¹ (1.Hongik Univ. , KOREA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-9-2] Effect of Buffer Thickness on Degradation of AlGaN/ GaN HEMTs on Si

A. Frank Wilson¹, A. Wakejima¹, T. Egawa¹ (1.Nagoya Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-9-3] The investigation of p-GaN gate HFET on 6-inch silicon using AlN interlayer

Y. S. Eum¹, W. S. Kim¹, J. Park¹, K. C. Kim¹, E. J. Hwang¹, T. Jang¹ (1.LG Electronics , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-9-4] Roles of Unintentionally-doped channel on Carbon doped GaN for high performance AlGaN/GaN HFET

J. H. Shin¹, Y. S. Eum¹, J. M. Kim¹, K. C. Kim¹, T. Jang¹ (1.IGBT part, System IC R&D, LG Electronics , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-9-5] Damage-free Neutral Beam Etching for High-performance GaN HEMT

Y. Tamura^1,3, J. Ohta^2,3, H. Fujioka^2,3, S. Samukawa^1,3 (1.Tohoku Univ., 2.The Univ. of Tokyo, 3.CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-1-1] Multiexciton generation and recombination in semiconductor nanomaterials

Y. Kanemitsu¹ (1.Kyoto Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-1-2] Disorder-Induced Enhancement of Avalanche Multiplication in a Silicon Nanodot Array

N. Mori^1,2, M. Tomita³, H. Minari^1,2, T. Watanabe³, N. Koshida⁴ (1.Osaka Univ., 2.JST CREST, 3.Waseda Univ., 4.Tokyo Univ. A&T , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[G-1-3] Floating Gate Memory with High-density Nanodot Array Formed Utilizing Ti-binding Dps

H. Kamitake^1,2, K. Ohara¹, M. Uenuma^1,2, B. Zheng^1,2, Y. Ishikawa^1,2, I. Yamashita^1,2,3, Y. Uraoka^1,2 (1.Nara Inst. of Science and Tech., 2.CREST, 3.ATRL, Panasonic Corporation , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (201 - 210)

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