[E-8-2] Evolution of Electron Trapping under Positive-Bias Temperature Stressing of the HfO2/TiN Gate n-MOSFET

Y. Gao¹, D. S. Ang¹, C. D. Young², G. Bersuker² (1.Nanyang Technological Univ. , Singapore, 2.SEMATECH , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-8-3] Random Telegraph Signals under External Mechanical Stress: A New Method to Probe Trap Structural Relaxation in MOSFET Gate Dielectrics

K. C. Tu¹, M.J. Chen¹ (1.Univ. of National Chiao Tung , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-8-4] Low frequency noise assessment of accumulation Si p-MOSFETs

P. Gaubert¹, A. Teramoto¹, S. Sugawa^1,2, T. Ohmi¹ (1.New Industry Creation Hatchery Center, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-9-1] Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices

D. Rideau¹, F. Monsieur¹, Ben Akkez^1,2, S. Haendler¹, A. Cros¹, O. Nier^1,2, O. Saxod¹, C. Tavernier¹, H. Jaouen¹ (1.STMicroelectronics , STM, 2.IMEP-LAHC , IMEP)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-9-2] Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire MOSFETs Based on Radio-Frequency Analysis

K. R. Kim¹, S. Shin¹, S. Cho², J. H. Lee³, I. M. Kang³ (1.Ulsan National Inst. of Sci. and Tech. , Korea, 2.Stanford Univ. , USA, 3.Kyungpook National Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-9-3] A Novel and Direct Measurement of the Mobility on Very Small Dimension CMOS Devices with Channel Length Down to 20nm

E. R. Hsieh¹, S. Chung¹, C. H. Tsai², R. M. Huang², C. T. Tsai², C. W. Liang² (1.National Chiao Tung Univ., 2.UMC , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[E-9-4] Radiation-Induced Parasitic Bipolar Effect in PMOS with Embedded SiGe

T. Kato¹, T. Uemura¹, H. Mori¹, Y. Ikeda¹, K. Suzuki¹, S. Satoh¹, H. Matsuyama¹ (1.Fujitsu Semiconductor Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-1-1] III-V 3D Transistors

Y. Peide¹, J. J. Gu¹ (1.Purdue Univ. , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-1-2] InGaAs MOSFETs with Regrown Source: DC and RF Performance

L. E. Wernersson¹, M. Egard¹, E. Lind¹ (1.Lund Univ. , Sweden)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-1-3] BEOL InGaAs nMOSFETs on Polyimide

T. Maeda¹, H. Ishii¹, T. Itatani¹, W. Jevasuwan¹, O. Ichikawa², M. Hata², T. Yasuda¹ (1.AIST, 2.Sumitomo Chemical , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (161 - 170)

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