[PL-2-2] One-step Further of Wide Band-gap Semiconductor SiC

H. Matsunami¹ (1.Kyoto Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-1] Interface Stabilizing and EOT Scaling of Al2O3 /Ge Gate Stack with Ozone Post-Oxidation without Additional Interface Layer Formation

J. Sun^1,2, Y. Geng², H. Lu², W. Wu¹, X. Ye¹, Z. Yang¹, Y. Zhao¹, Y. Shi¹ (1.Univ. of Nanjing, 2.Univ. of Fudan , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-2] Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical

K. Kato^1,2, S. Shibayama¹, M. Sakashita¹, W. Takeuchi¹, N. Taoka¹, O. Nakatsuka¹, S. Zaima¹ (1.Nagoya Univ., 2.Research Fellow of JSPS , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-3] Fabrication of ZrSiO/Ge Gate Stacks with GeO2 and ZrGeO Interlayers

S. Kojima¹, K. Sakamoto¹, Y. Iwamura¹, K. Hirayama¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-4] Growth of Epitaxial Beryllium Oxide on Ge (111) by Molecular Beam Epitaxy

S. K. Wang¹, B. Xue¹, H. Liang², Z. Mei², Y. Li¹, W. Zhao¹, B. Sun¹, X. Du², H. G. Liu¹ (1.Inst. of Microelectronics, Chinese Academy of Sci., 2.Inst. of Physics, Chinese Academy of Sci. , CHINA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-5] High Quality Germanium Dioxide Formation Using Damage-Free and Low-Temperature Neutral Beam Oxidation Process

A. Wada¹, R. Zhang², S. Takagi², S. Samukawa¹ (1.Tohoku Univ., 2.The Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-6] Impacts of interfacial insulator on poly-crystalline germanium growth in low temperature processing

S. Kabuyanagi^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-7] Laterally Graded SiGe-on-Insulator with Universal Si Profile by Cooling-Rate-Controlled Rapid-Melting-Growth

R. Matsumura¹, Y. Tojo¹, H. Yokoyama¹, M. Kurosawa¹, T. Sadoh¹, M. Miyao¹ (1.Kyushu Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-8] Enhanced Carrier Activation by B and Sb/P Doping for Ge CMOSFET

T. Ueno¹, H. Miyoshi¹, Y. Hirota¹, J. Yamanaka², K. Arimoto², K. Nakagawa², Y. Yusuke³, Y. Shiraki³, T. Kaitsuka¹ (1.Tokyo Electron Ltd., 2.Univ. of Yamanashi, 3.Tokyo City Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-1-9] Interface Reaction Control of La2O3-gated InGaAs MOS Capacitors by Gate Metal Selection

D. H. Zadeh¹, Y. Suzuki¹, H. Omine¹, K. Kakushima¹, P. Ahmet¹, Y. Kataoka¹, A. Nishiyama¹, N. Sugii¹, K. Tsutsui¹, K. Natori¹, T. Hattori¹, H. Iwai¹ (1.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (411 - 420)

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